2 Megabit (256K x 8) Page Mode EEPROM
SST29EE020A / SST29LE020A / SST29VE020A
Data Sheet
FEATURES:
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Single Voltage Read and Write Operations
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Fast Read Access Time: 120 and 150 ns
1
– 5.0V-only for the SST29EE020A
– 3.0-3.6V for the SST29LE020A
– 2.7-3.6V for the SST29VE020A
– 5.0V-only operation: 120 and 150 ns
– 3.0-3.6V operation: 200 and 250 ns
– 2.7-3.6V operation: 200 and 250 ns
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•
Superior Reliability
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Latched Address and Data
2
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Automatic Write Timing
– Internal VPP Generation
End of Write Detection
3
Low Power Consumption
•
– Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 3.0/2.7V
– Standby Current: 10 µA (typical)
– Toggle Bit
– Data# Polling
4
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Hardware and Software Data Protection
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Fast Page Write Operation
TTL I/O Compatibility
– 128 Bytes per Page, 2048 Pages
– Page Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 10 sec (typical)
– Effective Byte Write Cycle Time: 39 µs (typical)
5
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
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6
– 32 Pin PDIP
– 32-Pin PLCC
– 32-Pin TSOP (8mm x 20mm)
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PRODUCT DESCRIPTION
The SST29EE020A/29LE020A/29VE020A are suited
for applications that require convenient and economical
updatingofprogram, configuration, ordatamemory. For
all system applications, the SST29EE020A/29LE020A/
29VE020A significantly improve performance and reli-
ability, while lowering power consumption. The
SST29EE020A/29LE020A/29VE020A improve flexibil-
itywhileloweringthecostforprogram,data,andconfigu-
ration storage applications.
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TheSST29EE020A/29LE020A/29VE020Aare256Kx8
CMOS Page Write EEPROM manufactured with SST’s
proprietary, high performance CMOS SuperFlash
technology. The split-gate cell design and thick oxide
tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST29EE020A/29LE020A/29VE020A write with a
singlepowersupply.InternalErase/Programistranspar-
ent to the user. The SST29EE020A/29LE020A/
29VE020AconformtoJEDECstandardpinoutsforbyte-
wide memories.
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To meet high density, surface mount requirements, the
SST29EE020A/29LE020A/29VE020Aareofferedin32-
pin TSOP and 32-lead PLCC packages. A 600-mil, 32-
pin PDIP package is also available. See Figures 1 and 2
for pinouts.
Featuring high performance page write, the
SST29EE020A/29LE020A/29VE020A provide a typical
byte-write time of 39 µsec. The entire memory, i.e., 256
KBytes, can be written page-by-page in as little as 10
seconds, when using interface features such as Toggle
Bit or Data# Polling to indicate the completion of a write
cycle. To protect against inadvertent write, the
SST29EE020A/29LE020A/29VE020A have on-chip
hardware and software data protection schemes. De-
signed, manufactured, andtestedforawidespectrumof
applications, the SST29EE020A/29LE020A/29VE020A
are offered with a guaranteed page write endurance of
104 cycles. Data retention is rated at greater than 100
years.
Device Operation
TheSSTpagemodeEEPROMoffersin-circuitelectrical
write capability. The SST29EE020A/29LE020A/
29VE020A does not require separate Erase and Pro-
gram operations. The internally timed write cycle
executes both Erase and Program transparently to the
user. The SST29EE020A/29LE020A/29VE020A have
industry standard Software Data Protection. The
SST29EE020A/29LE020A/29VE020A are compatible
with industry standard EEPROM pinouts and
functionality.
3©0169-0919 S2i/l9ic9on Storage Technology, Inc. The SST logo and SuperFlash are registered trademar1ks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.