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SST29EE020-120-4I-EH PDF预览

SST29EE020-120-4I-EH

更新时间： 2024-11-08 20:31:23
品牌 Logo 应用领域
芯科 - SILICON 光电二极管
页数 文件大小 规格书
26页 771K
描述
Flash, 256KX8, 120ns, PDSO32, 8 X 20 MM, MO-142BD, TSOP1-32

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SST29EE020-120-4I-EH 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：8 X 20 MM, MO-142BD, TSOP1-32
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.88Is Samacsys：N
最长访问时间：120 ns命令用户界面：NO
数据轮询：YESJESD-30 代码：R-PDSO-G32
JESD-609代码：e0长度：18.4 mm
内存密度：2097152 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：32字数：262144 words
字数代码：256000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP32,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
页面大小：128 words并行/串行：PARALLEL
电源：5 V编程电压：5 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大待机电流：0.00005 A子类别：EEPROMs
最大压摆率：0.05 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL切换位：YES
宽度：8 mm最长写入周期时间 (tWC)：10 ms
Base Number Matches：1

SST29EE020-120-4I-EH 数据手册

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2 Mbit (256K x8) Page-Write EEPROM  
SST29EE020 / SST29LE020 / SST29VE020  
SST29EE / LE / VE0202Mb Page-Write flash memories  
Data Sheet  
FEATURES:  
•
Single Voltage Read and Write Operations  
•
•
Latched Address and Data  
– 4.5-5.5V for SST29EE020  
– 3.0-3.6V for SST29LE020  
– 2.7-3.6V for SST29VE020  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption  
– Active Current: 20 mA (typical) for 5V and  
10 mA (typical) for 3.0/2.7V  
– Standby Current: 10 µA (typical)  
Fast Page-Write Operation  
Automatic Write Timing  
– Internal VPP Generation  
End of Write Detection  
– Toggle Bit  
– Data# Polling  
•
•
•
•
•
Hardware and Software Data Protection  
Product Identification can be accessed via  
Software Operation  
TTL I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)  
– 32-pin PDIP  
•
•
•
•
– 128 Bytes per Page, 2048 Pages  
– Page-Write Cycle: 5 ms (typical)  
– Complete Memory Rewrite: 10 sec (typical)  
– Effective Byte-Write Cycle Time: 39 µs (typical)  
•
Fast Read Access Time  
– 4.5-5.5V operation: 120 and 150 ns  
– 3.0-3.6V operation: 200 and 250 ns  
– 2.7-3.6V operation: 200 and 250 ns  
PRODUCT DESCRIPTION  
The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write  
EEPROM manufactured with SST’s proprietary, high per-  
formance CMOS SuperFlash technology. The split-gate  
cell design and thick oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches. The SST29EE/LE/VE020 write with a single  
power supply. Internal Erase/Program is transparent to the  
user. The SST29EE/LE/VE020 conform to JEDEC stan-  
dard pinouts for byte-wide memories.  
The SST29EE/LE/VE020 are suited for applications  
that require convenient and economical updating of  
program, configuration, or data memory. For all sys-  
tem applications, the SST29EE/LE/VE020 significantly  
improve performance and reliability, while lowering  
power consumption. The  
SST29EE/LE/VE020  
improve flexibility while lowering the cost for program,  
data, and configuration storage applications.  
To meet high density, surface mount requirements, the  
SST29EE/LE/VE020 are offered in 32-lead PLCC and  
32-lead TSOP packages. A 600-mil, 32-pin PDIP pack-  
age is also available. See Figures 1, 2, and 3 for pinouts.  
Featuring high performance Page-Write, the SST29EE/LE/  
VE020 provide a typical Byte-Write time of 39 µsec. The  
entire memory, i.e., 256 KBytes, can be written page-by-  
page in as little as 10 seconds, when using interface fea-  
tures such as Toggle Bit or Data# Polling to indicate the  
completion of a Write cycle. To protect against inadvertent  
write, the SST29EE/LE/VE020 have on-chip hardware and  
Software Data Protection schemes. Designed, manufac-  
tured, and tested for a wide spectrum of applications, the  
SST29EE/LE/VE020 are offered with a guaranteed Page-  
Write endurance of 10,000 cycles. Data retention is rated at  
greater than 100 years.  
Device Operation  
The SST Page-Write EEPROM offers in-circuit electrical  
write capability. The SST29EE/LE/VE020 does not require  
separate Erase and Program operations. The internally  
timed Write cycle executes both erase and program trans-  
parently to the user. The SST29EE/LE/VE020 have indus-  
try standard optional Software Data Protection, which SST  
recommends always to be enabled. The SST29EE/LE/  
VE020 are compatible with industry standard EEPROM  
pinouts and functionality.  
©2002 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
Small-Sector Flash and SSF are trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71062-06-000 2/02  
1
307  
1234567...26

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与SST29EE020-120-4I-EH相关器件

型号 品牌 获取价格 描述 数据表
SST29EE020-120-4I-EHE SILICON

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 		Flash, 256KX8, 120ns, PDSO32, 8 X 20 MM, LEAD FREE, MO-142BD, TSOP1-32
SST29EE020-120-4I-NH SST

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 		x8 EEPROM
SST29EE020-120-4I-NH SILICON

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 		Flash, 256KX8, 120ns, PQCC32, PLASTIC, MS-016AE, LCC-32
SST29EE020-120-4I-NHE SILICON

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 		Flash, 256KX8, 120ns, PQCC32, LEAD FREE, PLASTIC, MS-016AE, LCC-32
SST29EE020-120-4I-WH SILICON

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 		EEPROM, 256KX8, 120ns, Parallel, CMOS, PDSO32, 8 X 14 MM, TSOP1-32
SST29EE020-150-4C-EH SILICON

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 		EEPROM, 256KX8, 150ns, Parallel, CMOS, PDSO32
SST29EE020-150-4C-NH ETC

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 		x8 EEPROM
SST29EE020-150-4C-PH SILICON

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 		EEPROM, 256KX8, 150ns, Parallel, CMOS, PDIP32
SST29EE020-150-4C-U2 SST

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 		2 Mbit (256K x8) Page-Mode EEPROM
SST29EE020-150-4I-EH SILICON

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 		EEPROM, 256KX8, 150ns, Parallel, CMOS, PDSO32

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