是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | HVSON, | Reach Compliance Code: | compliant |
Factory Lead Time: | 7 weeks | 风险等级: | 5.6 |
最大时钟频率 (fCLK): | 104 MHz | JESD-30 代码: | R-PDSO-N8 |
JESD-609代码: | e3 | 长度: | 6 mm |
内存密度: | 16777216 bit | 内存集成电路类型: | FLASH |
内存宽度: | 1 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 16777216 words |
字数代码: | 16000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 16MX1 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | HVSON | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 编程电压: | 1.8 V |
筛选级别: | TS 16949 | 座面最大高度: | 0.8 mm |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.65 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Matte Tin (Sn) - annealed | 端子形式: | NO LEAD |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 5 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST26WF016BA-104I/SN | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
SST26WF016BAT-104I/MF | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
SST26WF016BAT-104I/SN | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
SST26WF016BT-104I/CS | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
SST26WF016BT-104I/MF | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
SST26WF016BT-104I/SN | MICROCHIP |
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1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
SST26WF032 | SST |
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1.8V Serial Quad I/O (SQI) Flash Memory | |
SST26WF032-80-4I-QAE | SST |
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1.8V Serial Quad I/O (SQI) Flash Memory | |
SST26WF032-80-4I-S2AE | SST |
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1.8V Serial Quad I/O (SQI) Flash Memory | |
SST26WF040B | MICROCHIP |
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The SST26WF040B/040BA Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O |