SST26WF016B/
SST26WF016BA
1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory
• Security ID
Features
- One-Time Programmable (OTP) 2 KByte,
Secure ID
• Single Voltage Read and Write Operations
- 1.65-1.95V
- 64 bit unique, factory pre-programmed identifier
- User-programmable area
• Serial Interface Architecture
• Temperature Range
- Industrial: -40°C to +85°C
• Packages Available
- Mode 0 and Mode 3
- Nibble-wide multiplexed I/O’s with SPI-like serial
command structure
- x1/x2/x4 Serial Peripheral Interface (SPI) Proto-
col
- 8-contact WDFN (6mm x 5mm)
- 8-lead SOIC (150 mil)
• High Speed Clock Frequency
- 104 MHz max
- 8-ball Chip Scale Package (Z-Scale™)
• All devices are RoHS compliant
• Burst Modes
Product Description
- Continuous linear burst
- 8/16/32/64 Byte linear burst with wrap-around
The Serial Quad I/O™ (SQI™) family of flash-memory
devices features a six-wire, 4-bit I/O interface that
allows for low-power, high-performance operation in a
low pin-count package. SST26WF016B/016BA also
support full command-set compatibility to traditional
Serial Peripheral Interface (SPI) protocol. System
designs using SQI flash devices occupy less board
space and ultimately lower system costs.
• Superior Reliability
- Endurance: 100,000 Cycles (min)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz)
- Standby current: 10 μA (typical)
- Deep Power-Down current: 2.5 μA (typical)
All members of the 26 Series, SQI family are manufac-
tured with SST proprietary, high-performance CMOS
SuperFlash® technology. The split-gate cell design
and thick-oxide tunneling injector attain better reliability
and manufacturability compared with alternate
approaches.
• Fast Erase Time
- Sector/Block Erase: 18 ms (typ), 25 ms (max)
- Chip Erase: 35 ms (typ), 50 ms (max)
• Page-Program
- 256 Bytes per page in x1 or x4 mode
• End-of-Write Detection
The SST26WF016B/SST26WF016BA significantly
improves performance and reliability, while lowering
power consumption. This device writes (Program or
Erase) with a single power supply of 1.65-1.95V. The
total energy consumed is a function of the applied volt-
age, current, and time of application. Since for any
given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time,
the total energy consumed during any Erase or Pro-
gram operation is less than alternative flash memory
technologies.
- Software polling the BUSY bit in status register
• Flexible Erase Capability
- Uniform 4 KByte sectors
- Four 8 KByte top and bottom parameter overlay
blocks
- One 32 KByte top and bottom overlay block
- Uniform 64 KByte overlay blocks
• Write-Suspend
- Suspend Program or Erase operation to access
another block/sector
SST26WF016B/016BA is offered in 8-contact WDFN
(6 mm x 5 mm), 8-lead SOIC (150 mil), and 8-ball
XFBGA (Z-Scale™) packages. See Figure 2-1 for pin
assignments.
• Software Reset (RST) mode
• Software Protection
- Individual-Block Write Protection with permanent
lock-down capability
Two configurations are available upon order:
SST26WF016B default at power-up has the WP# and
Hold# pins enabled and SST26WF016BA default at
power-up has the WP# and Hold# pins disabled.
- 64 KByte blocks, two 32 KByte blocks, and
eight 8 KByte parameter blocks
- Read Protection on top and bottom 8 KByte
parameter blocks
2014 Microchip Technology Inc.
DS20005013D-page 1