Datasheet > SST26WF080B-104I/MF

SST26WF080B-104I/MF

更新时间： 2024-09-18 20:56:31

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数	文件大小	规格书
96页	2806K
描述
SPI BUS SERIAL EEPROM

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SST26WF080B-104I/MF 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	HVSON,	Reach Compliance Code：	compliant
Factory Lead Time：	13 weeks	风险等级：	2.29
最大时钟频率 (fCLK)：	104 MHz	JESD-30 代码：	R-PDSO-N8
JESD-609代码：	e3	长度：	6 mm
内存密度：	83886080 bit	内存集成电路类型：	FLASH
内存宽度：	1	功能数量：	1
端子数量：	8	字数：	83886080 words
字数代码：	80000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	80MX1	封装主体材料：	PLASTIC/EPOXY
封装代码：	HVSON	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	并行/串行：	SERIAL
峰值回流温度（摄氏度）：	260	编程电压：	1.8 V
筛选级别：	TS 16949	座面最大高度：	0.8 mm
最大供电电压 (Vsup)：	1.95 V	最小供电电压 (Vsup)：	1.65 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn) - annealed	端子形式：	NO LEAD
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	宽度：	5 mm
Base Number Matches：	1

SST26WF080B-104I/MF 数据手册

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SST26WF040B/040BA

SST26WF080B/080BA

1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory

• Security ID

Features

- One-Time Programmable (OTP) 2 KByte,

Secure ID

• Single Voltage Read and Write Operations

- 1.65-1.95V

- 64 bit unique, factory pre-programmed identifier

- User-programmable area

• Serial Interface Architecture

• Temperature Range

- Mode 0 and Mode 3

- Industrial: -40°C to +85°C

• Packages Available

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

- 8-contact WDFN (6mm x 5mm)

- 8-lead SOIC (150 mil)

- 8-contact USON (2mm x 3mm)

- 8-ball XFBGA (Z-Scale™)

• High Speed Clock Frequency

- 104 MHz max

• Burst Modes

• All devices are RoHS compliant

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

Product Description

• Superior Reliability

- Endurance: 100,000 Cycles (min)

- Greater than 100 years Data Retention

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that allows for

low-power, high-performance operation in a low pin-count

package. SST26WF040B/040BA and SST26WF080B/

080BA also support full command-set compatibility to tradi-

tional Serial Peripheral Interface (SPI) protocol. System

designs using SQI flash devices occupy less board space

and ultimately lower system costs.

• Low Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby current: 10 µA (typical)

- Deep Power-Down current: 1.8 µA (typical)

• Fast Erase Time

- Sector/Block Erase: 18 ms (typ), 25 ms (max)

- Chip Erase: 35 ms (typ), 50 ms (max)

All members of the 26 Series, SQI family are manufactured

with proprietary, high-performance CMOS SuperFlash®

technology. The split-gate cell design and thick-oxide tun-

neling injector attain better reliability and manufacturability

compared with alternate approaches.

• Page-Program

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

- Software polling the BUSY bit in status register

• Flexible Erase Capability

The SST26WF040B/040BA and SST26WF080B/

080BA significantly improves performance and reliabil-

ity, while lowering power consumption. This device

writes (Program or Erase) with a single power supply of

1.65-1.95V. The total energy consumed is a function of

the applied voltage, current, and time of application.

Since for any given voltage range, the SuperFlash

technology uses less current to program and has a

shorter erase time, the total energy consumed during

any Erase or Program operation is less than alternative

flash memory technologies.

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter overlay

blocks

- One 32 KByte top and bottom overlay block

- Uniform 64 KByte overlay blocks

• Write-Suspend

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Write Protection

SST26WF040B/040BA and SST26WF080B/080BA is

offered in 8-contact WDFN (6 mm x 5 mm), 8-lead SOIC

(150 mil), 8-contact USON, and 8-ball XFBGA (Z-Scale™)

packages. See Figure 2-1 for pin assignments.

- Individual-Block Write Protection with permanent

lock-down capability

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

Two configurations are available upon order:

SST26WF040B and SST26WF080B default at power-

up has the WP# and Hold# pins enabled and

SST26WF040BA and SST26WF080BA default at

power-up has the WP# and Hold# pins disabled.

- Read Protection on top and bottom 8 KByte

parameter blocks

 2014-2017 Microchip Technology Inc.

DS20005283C-page 1

12 3 4 5 6 7...96

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与SST26WF080B-104I/MF相关器件

型号	品牌	获取价格	描述	数据表
SST26WF080B-104I/SN	MICROCHIP	获取价格	SPI BUS SERIAL EEPROM
SST26WF080BA	MICROCHIP	获取价格	The SST26WF080B/080BA Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O
SST26WF080BA-104I/SN	MICROCHIP	获取价格	SPI BUS SERIAL EEPROM
SST270	VISHAY	获取价格	P-Channel JFETs
SST270	CALOGIC	获取价格	P-Channel JFET
SST270-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, P-Channel, Junction FET
SST270-LF	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC
SST270T	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236,
SST270T	TEMIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236,
SST270T1	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC

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