Datasheet > SST26WF016BT-104I/MF

SST26WF016BT-104I/MF

更新时间： 2024-09-19 00:52:47

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
75页	1021K
描述
1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory

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SST26WF016B/

SST26WF016BA

1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory

• Security ID

Features

- One-Time Programmable (OTP) 2 KByte,

Secure ID

• Single Voltage Read and Write Operations

- 1.65-1.95V

- 64 bit unique, factory pre-programmed identifier

- User-programmable area

• Serial Interface Architecture

• Temperature Range

- Industrial: -40°C to +85°C

• Packages Available

- Mode 0 and Mode 3

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- x1/x2/x4 Serial Peripheral Interface (SPI) Proto-

col

- 8-contact WDFN (6mm x 5mm)

- 8-lead SOIC (150 mil)

• High Speed Clock Frequency

- 104 MHz max

- 8-ball Chip Scale Package (Z-Scale™)

• All devices are RoHS compliant

• Burst Modes

Product Description

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that

allows for low-power, high-performance operation in a

low pin-count package. SST26WF016B/016BA also

support full command-set compatibility to traditional

Serial Peripheral Interface (SPI) protocol. System

designs using SQI flash devices occupy less board

space and ultimately lower system costs.

• Superior Reliability

- Endurance: 100,000 Cycles (min)

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby current: 10 μA (typical)

- Deep Power-Down current: 2.5 μA (typical)

All members of the 26 Series, SQI family are manufac-

tured with SST proprietary, high-performance CMOS

SuperFlash® technology. The split-gate cell design

and thick-oxide tunneling injector attain better reliability

and manufacturability compared with alternate

approaches.

• Fast Erase Time

- Sector/Block Erase: 18 ms (typ), 25 ms (max)

- Chip Erase: 35 ms (typ), 50 ms (max)

• Page-Program

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

The SST26WF016B/SST26WF016BA significantly

improves performance and reliability, while lowering

power consumption. This device writes (Program or

Erase) with a single power supply of 1.65-1.95V. The

total energy consumed is a function of the applied volt-

age, current, and time of application. Since for any

given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time,

the total energy consumed during any Erase or Pro-

gram operation is less than alternative flash memory

technologies.

- Software polling the BUSY bit in status register

• Flexible Erase Capability

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter overlay

blocks

- One 32 KByte top and bottom overlay block

- Uniform 64 KByte overlay blocks

• Write-Suspend

- Suspend Program or Erase operation to access

another block/sector

SST26WF016B/016BA is offered in 8-contact WDFN

(6 mm x 5 mm), 8-lead SOIC (150 mil), and 8-ball

XFBGA (Z-Scale™) packages. See Figure 2-1 for pin

assignments.

• Software Reset (RST) mode

• Software Protection

- Individual-Block Write Protection with permanent

lock-down capability

Two configurations are available upon order:

SST26WF016B default at power-up has the WP# and

Hold# pins enabled and SST26WF016BA default at

power-up has the WP# and Hold# pins disabled.

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

- Read Protection on top and bottom 8 KByte

parameter blocks

 2014 Microchip Technology Inc.

DS20005013D-page 1

12 3 4 5 6 7...75

中文翻译

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SST26WF016BT-104I/MF 替代型号

型号	品牌	替代类型	描述	数据表
SST26WF016B-104I/MF	MICROCHIP	完全替代	1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory

与SST26WF016BT-104I/MF相关器件

型号	品牌	获取价格	描述	数据表
SST26WF016BT-104I/SN	MICROCHIP	获取价格	1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26WF032	SST	获取价格	1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032-80-4I-QAE	SST	获取价格	1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032-80-4I-S2AE	SST	获取价格	1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF040B	MICROCHIP	获取价格	The SST26WF040B/040BA Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O
SST26WF040B-104I/MF	MICROCHIP	获取价格	SPI BUS SERIAL EEPROM
SST26WF040B-104I/SN	MICROCHIP	获取价格	SPI BUS SERIAL EEPROM
SST26WF040BA	MICROCHIP	获取价格	The SST26WF040B/040BA Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O
SST26WF040BA-104I/MF	MICROCHIP	获取价格	SPI BUS SERIAL EEPROM
SST26WF040BA-104I/SN	MICROCHIP	获取价格	SPI BUS SERIAL EEPROM

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