Datasheet > SST26WF040BA

SST26WF040BA

更新时间： 2024-09-19 14:53:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
96页	2815K
描述
The SST26WF040B/040BA Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O serial i

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SST26WF040BA 数据手册

SST26WF040B/040BA

SST26WF080B/080BA

1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory

• Security ID

Features

- One-Time Programmable (OTP) 2 KByte,

Secure ID

• Single Voltage Read and Write Operations

- 1.65-1.95V

- 64 bit unique, factory pre-programmed identifier

- User-programmable area

• Serial Interface Architecture

• Temperature Range

- Mode 0 and Mode 3

- Industrial: -40°C to +85°C

• Packages Available

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

- 8-contact WDFN (6mm x 5mm)

- 8-lead SOIC (150 mil)

- 8-contact USON (2mm x 3mm)

- 8-ball XFBGA (Z-Scale™)

• High Speed Clock Frequency

- 104 MHz max

• Burst Modes

• All devices are RoHS compliant

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

Product Description

• Superior Reliability

- Endurance: 100,000 Cycles (min)

- Greater than 100 years Data Retention

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that allows for

low-power, high-performance operation in a low pin-count

package. SST26WF040B/040BA and SST26WF080B/

080BA also support full command-set compatibility to tradi-

tional Serial Peripheral Interface (SPI) protocol. System

designs using SQI flash devices occupy less board space

and ultimately lower system costs.

• Low Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby current: 10 µA (typical)

- Deep Power-Down current: 1.8 µA (typical)

• Fast Erase Time

- Sector/Block Erase: 18 ms (typ), 25 ms (max)

- Chip Erase: 35 ms (typ), 50 ms (max)

All members of the 26 Series, SQI family are manufactured

with proprietary, high-performance CMOS SuperFlash®

technology. The split-gate cell design and thick-oxide tun-

neling injector attain better reliability and manufacturability

compared with alternate approaches.

• Page-Program

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

- Software polling the BUSY bit in status register

• Flexible Erase Capability

The SST26WF040B/040BA and SST26WF080B/

080BA significantly improves performance and reliabil-

ity, while lowering power consumption. This device

writes (Program or Erase) with a single power supply of

1.65-1.95V. The total energy consumed is a function of

the applied voltage, current, and time of application.

Since for any given voltage range, the SuperFlash

technology uses less current to program and has a

shorter erase time, the total energy consumed during

any Erase or Program operation is less than alternative

flash memory technologies.

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter overlay

blocks

- One 32 KByte top and bottom overlay block

- Uniform 64 KByte overlay blocks

• Write-Suspend

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Write Protection

SST26WF040B/040BA and SST26WF080B/080BA is

offered in 8-contact WDFN (6 mm x 5 mm), 8-lead SOIC

(150 mil), 8-contact USON, and 8-ball XFBGA (Z-Scale™)

packages. See Figure 2-1 for pin assignments.

- Individual-Block Write Protection with permanent

lock-down capability

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

Two configurations are available upon order:

SST26WF040B and SST26WF080B default at power-

up has the WP# and Hold# pins enabled and

SST26WF040BA and SST26WF080BA default at

power-up has the WP# and Hold# pins disabled.

- Read Protection on top and bottom 8 KByte

parameter blocks

 2014-2017 Microchip Technology Inc.

DS20005283C-page 1

12 3 4 5 6 7...96

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与SST26WF040BA相关器件

型号	品牌	获取价格	描述	数据表
SST26WF040BA-104I/MF	MICROCHIP	获取价格	SPI BUS SERIAL EEPROM
SST26WF040BA-104I/SN	MICROCHIP	获取价格	SPI BUS SERIAL EEPROM
SST26WF040BT-104I/NP	MICROCHIP	获取价格	SPI BUS SERIAL EEPROM
SST26WF064C	MICROCHIP	获取价格	The SST26WF064C Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O serial
SST26WF080B	MICROCHIP	获取价格	The SST26WF080B/080BA Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O
SST26WF080B-104I/MF	MICROCHIP	获取价格	SPI BUS SERIAL EEPROM
SST26WF080B-104I/SN	MICROCHIP	获取价格	SPI BUS SERIAL EEPROM
SST26WF080BA	MICROCHIP	获取价格	The SST26WF080B/080BA Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O
SST26WF080BA-104I/SN	MICROCHIP	获取价格	SPI BUS SERIAL EEPROM
SST270	VISHAY	获取价格	P-Channel JFETs

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