是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.73 | FET 技术: | JUNCTION |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.35 W |
子类别: | FET General Purpose Small Signal | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST271-E3 | VISHAY |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET | |
SST271T | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST271T1 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, PLASTIC | |
SST271-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST271T2 | CALOGIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET | |
SST271TT1 | TEMIC |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236, | |
SST271TT2 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST271TT2-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A | |
SST27SF010 | SST |
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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash | |
SST27SF010-70 | SST |
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256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash |