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SST25VF080B-50-4C-PAE PDF预览

SST25VF080B-50-4C-PAE

更新时间: 2024-09-18 20:35:11
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器时钟PC光电二极管内存集成电路
页数 文件大小 规格书
32页 897K
描述
1M X 8 FLASH 2.7V PROM, PDIP8, 0.300 INCH, ROHS COMPLIANT, PLASTIC, MS-001BA, DIP-8

SST25VF080B-50-4C-PAE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DIP
包装说明:DIP, DIP8,.3针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:8 weeks
风险等级:2.2Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:460249
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Dual-In-Line PackagesSamacsys Footprint Name:SST25VF080B-50-4C-PAE-1
Samacsys Released Date:2019-02-27 16:45:11Is Samacsys:N
最大时钟频率 (fCLK):50 MHz数据保留时间-最小值:100
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDIP-T8
JESD-609代码:e3长度:9.5885 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:8字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT APPLICABLE
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:3.6068 mm
串行总线类型:SPI最大待机电流:0.00002 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT APPLICABLE类型:NOR TYPE
宽度:7.62 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

SST25VF080B-50-4C-PAE 数据手册

 浏览型号SST25VF080B-50-4C-PAE的Datasheet PDF文件第2页浏览型号SST25VF080B-50-4C-PAE的Datasheet PDF文件第3页浏览型号SST25VF080B-50-4C-PAE的Datasheet PDF文件第4页浏览型号SST25VF080B-50-4C-PAE的Datasheet PDF文件第5页浏览型号SST25VF080B-50-4C-PAE的Datasheet PDF文件第6页浏览型号SST25VF080B-50-4C-PAE的Datasheet PDF文件第7页 
SST25VF080B  
8 Mbit SPI Serial Flash  
• Packages Available  
Features  
- 8-lead SOIC (200 mils)  
- 8-contact WSON (6mm x 5mm)  
- 8-lead PDIP (300 mils)  
• Single Voltage Read and Write Operations  
- 2.7-3.6V  
• Serial Interface Architecture  
- SPI Compatible: Mode 0 and Mode 3  
• High Speed Clock Frequency  
- 50/66 MHz conditional (see Table 5-6)  
• Superior Reliability  
• All devices are RoHS compliant  
Product Description  
25 series Serial Flash family features a four-wire, SPI-  
compatible interface that allows for a low pin-count  
package which occupies less board space and ulti-  
mately lowers total system costs. The SST25VF080B  
devices are enhanced with improved operating fre-  
quency and lower power consumption. SST25VF080B  
SPI serial flash memories are manufactured with pro-  
prietary, high-performance CMOS SuperFlash technol-  
ogy. The split-gate cell design and thick-oxide tunneling  
injector attain better reliability and manufacturability  
compared with alternate approaches.  
- Endurance: 100,000 Cycles (typical)  
- Greater than 100 years Data Retention  
• Low Power Consumption:  
- Active Read Current: 10 mA (typical)  
- Standby Current: 5 µA (typical)  
• Flexible Erase Capability  
- Uniform 4 KByte sectors  
- Uniform 32 KByte overlay blocks  
- Uniform 64 KByte overlay blocks  
The SST25VF080B devices significantly improve per-  
formance and reliability, while lowering power con-  
sumption. The devices write (Program or Erase) with a  
single power supply of 2.7-3.6V for SST25VF080B.  
The total energy consumed is a function of the applied  
voltage, current, and time of application. Since for any  
given voltage range, the SuperFlash technology uses  
less current to program and has a shorter erase time,  
the total energy consumed during any Erase or Pro-  
gram operation is less than alternative flash memory  
technologies.  
• Fast Erase and Byte-Program:  
- Chip-Erase Time: 35 ms (typical)  
- Sector-/Block-Erase Time: 18 ms (typical)  
- Byte-Program Time: 7 µs (typical)  
• Auto Address Increment (AAI) Programming  
- Decrease total chip programming time over  
Byte-Program operations  
• End-of-Write Detection  
- Software polling the BUSY bit in Status Register  
- Busy Status readout on SO pin in AAI Mode  
The SST25VF080B device is offered in 8-lead SOIC  
(200 mils), 8-contact WSON (6mm x 5mm), and 8-lead  
PDIP (300 mils) packages. See Figure 2-1 for pin  
assignments.  
• Hold Pin (HOLD#)  
- Suspends a serial sequence to the memory  
without deselecting the device  
• Write Protection (WP#)  
- Enables/Disables the Lock-Down function of the  
status register  
• Software Write Protection  
- Write protection through Block-Protection bits in  
status register  
Temperature Range  
- Commercial: 0°C to +70°C  
- Industrial: -40°C to +85°C  
2015 Microchip Technology Inc.  
DS20005045C-page 1  
 

SST25VF080B-50-4C-PAE 替代型号

型号 品牌 替代类型 描述 数据表
W25X80AVDAIZ WINBOND

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