是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | DIP, DIP8,.3 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | Factory Lead Time: | 8 weeks |
风险等级: | 2.2 | Samacsys Confidence: | 3 |
Samacsys Status: | Released | Samacsys PartID: | 460249 |
Samacsys Pin Count: | 8 | Samacsys Part Category: | Integrated Circuit |
Samacsys Package Category: | Dual-In-Line Packages | Samacsys Footprint Name: | SST25VF080B-50-4C-PAE-1 |
Samacsys Released Date: | 2019-02-27 16:45:11 | Is Samacsys: | N |
最大时钟频率 (fCLK): | 50 MHz | 数据保留时间-最小值: | 100 |
耐久性: | 100000 Write/Erase Cycles | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e3 | 长度: | 9.5885 mm |
内存密度: | 8388608 bit | 内存集成电路类型: | FLASH |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 1MX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | NOT APPLICABLE |
电源: | 3/3.3 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 座面最大高度: | 3.6068 mm |
串行总线类型: | SPI | 最大待机电流: | 0.00002 A |
子类别: | Flash Memories | 最大压摆率: | 0.03 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Matte Tin (Sn) - annealed | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT APPLICABLE | 类型: | NOR TYPE |
宽度: | 7.62 mm | 写保护: | HARDWARE/SOFTWARE |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
W25X80AVDAIZ | WINBOND |
功能相似 |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
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