Datasheet > SST25VF080B-50-4C-PAE-T

SST25VF080B-50-4C-PAE-T

更新时间： 2024-09-19 01:08:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
32页	968K
描述
8 Mbit SPI Serial Flash

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SST25VF080B

8 Mbit SPI Serial Flash

• Packages Available

Features

- 8-lead SOIC (200 mils)

- 8-contact WSON (6mm x 5mm)

- 8-lead PDIP (300 mils)

• Single Voltage Read and Write Operations

- 2.7-3.6V

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

• High Speed Clock Frequency

- 50/66 MHz conditional (see Table 5-6)

• Superior Reliability

• All devices are RoHS compliant

Product Description

25 series Serial Flash family features a four-wire, SPI-

compatible interface that allows for a low pin-count

package which occupies less board space and ulti-

mately lowers total system costs. The SST25VF080B

devices are enhanced with improved operating fre-

quency and lower power consumption. SST25VF080B

SPI serial flash memories are manufactured with pro-

prietary, high-performance CMOS SuperFlash technol-

ogy. The split-gate cell design and thick-oxide tunneling

injector attain better reliability and manufacturability

compared with alternate approaches.

- Endurance: 100,000 Cycles (typical)

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Read Current: 10 mA (typical)

- Standby Current: 5 µA (typical)

• Flexible Erase Capability

- Uniform 4 KByte sectors

- Uniform 32 KByte overlay blocks

- Uniform 64 KByte overlay blocks

The SST25VF080B devices significantly improve per-

formance and reliability, while lowering power con-

sumption. The devices write (Program or Erase) with a

single power supply of 2.7-3.6V for SST25VF080B.

The total energy consumed is a function of the applied

voltage, current, and time of application. Since for any

given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time,

the total energy consumed during any Erase or Pro-

gram operation is less than alternative flash memory

technologies.

• Fast Erase and Byte-Program:

- Chip-Erase Time: 35 ms (typical)

- Sector-/Block-Erase Time: 18 ms (typical)

- Byte-Program Time: 7 µs (typical)

• Auto Address Increment (AAI) Programming

- Decrease total chip programming time over

Byte-Program operations

• End-of-Write Detection

- Software polling the BUSY bit in Status Register

- Busy Status readout on SO pin in AAI Mode

The SST25VF080B device is offered in 8-lead SOIC

(200 mils), 8-contact WSON (6mm x 5mm), and 8-lead

PDIP (300 mils) packages. See Figure 2-1 for pin

assignments.

• Hold Pin (HOLD#)

- Suspends a serial sequence to the memory

without deselecting the device

• Write Protection (WP#)

- Enables/Disables the Lock-Down function of the

status register

• Software Write Protection

- Write protection through Block-Protection bits in

status register

• Temperature Range

- Commercial: 0°C to +70°C

- Industrial: -40°C to +85°C

 2015 Microchip Technology Inc.

DS20005045C-page 1

12 3 4 5 6 7...32

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与SST25VF080B-50-4C-PAE-T相关器件

型号	品牌	获取价格	描述	数据表
SST25VF080B-50-4C-PAF	SST	获取价格	8 Mbit SPI Serial Flash
SST25VF080B-50-4C-QAE	SST	获取价格	8 Mbit SPI Serial Flash
SST25VF080B-50-4C-QAF	SST	获取价格	8 Mbit SPI Serial Flash
SST25VF080B-50-4C-QAF	MICROCHIP	获取价格	1M X 8 FLASH 2.7V PROM, PDSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8
SST25VF080B-50-4C-QAF-T	MICROCHIP	获取价格	IC,SERIAL EEPROM,NOR FLASH,1MX8,CMOS,LLCC,8PIN,PLASTIC
SST25VF080B-50-4C-S2AE	SST	获取价格	8 Mbit SPI Serial Flash
SST25VF080B-50-4C-S2AF	SST	获取价格	8 Mbit SPI Serial Flash
SST25VF080B-50-4C-S2AF	MICROCHIP	获取价格	8 Mbit SPI Serial Flash
SST25VF080B-50-4C-S2AF-T	MICROCHIP	获取价格	IC,SERIAL EEPROM,NOR FLASH,1MX8,CMOS,SOP,8PIN,PLASTIC
SST25VF080B-50-4I-PAE	SST	获取价格	8 Mbit SPI Serial Flash

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