生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 0.5 A |
最大漏极电流 (ID): | 0.5 A | 最大漏源导通电阻: | 0.145 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F6 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大功率耗散 (Abs): | 0.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM6L10TU(TE85L) | TOSHIBA |
获取价格 |
SSM6L10TU(TE85L) | |
SSM6L10TU(TE85L,F) | TOSHIBA |
获取价格 |
SSM6L10TU(TE85L,F) | |
SSM6L11TU | TOSHIBA |
获取价格 |
High Speed Switching Applications | |
SSM6L11TU(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,500MA I(D),SOT-363VAR | |
SSM6L11TU_09 | TOSHIBA |
获取价格 |
High Speed Switching Applications | |
SSM6L12TU | TOSHIBA |
获取价格 |
High-Speed Switching Applications | |
SSM6L12TU(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,500MA I(D),SOT-363VAR | |
SSM6L12TU(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,500MA I(D),SOT-363VAR | |
SSM6L12TU,LF(T | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor | |
SSM6L13TU | TOSHIBA |
获取价格 |
Power Management Switch Applications |