SSM6L14FE
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L14FE
○Power Management Switch Applications
○High-Speed Switching Applications
Unit: mm
1.6±0.05
•
N-ch: 1.5-V drive
P-ch: 1.5-V drive
1.2±0.05
•
•
N-ch, P-ch, 2-in-1
Low ON-resistance Q1 N-ch:R
= 330 mΩ (max) (@V
= 2.5 V)
GS
DS(ON)
R
1
2
3
6
= 240 mΩ (max) (@V = 4.5 V)
GS
= 440 mΩ (max) (@V = -2.5 V)
GS
DS(ON)
DS(ON)
Q2 P-ch:R
5
4
R
= 300 mΩ (max) (@V = -4.5 V)
GS
DS(ON)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
V
20
±10
0.8
1.6
V
V
DSS
Gate-source voltage
GSS
DC
I
D
1.Source1
2.Gate1
4.Source2
5.Gate2
Drain current
A
Pulse
I
DP
3.Drain2
6.Drain1
Q2 Absolute Maximum Ratings (Ta = 25°C)
ES6
JEDEC
JEITA
―
Characteristics
Drain-source voltage
Symbol
Rating
Unit
―
V
V
−20
±8
V
V
DSS
TOSHIBA
2-2N1D
Gate-source voltage
GSS
DC
I
−0.72
−1.44
Weight: 3.0 mg (typ.)
D
Drain current
A
Pulse
I
DP
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)
Characteristics
Power dissipation
Symbol
P (Note 1)
Rating
Unit
150
150
mW
°C
D
Channel temperature
T
ch
Storage temperature range
T
stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note1: Mounted on an FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6 )
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
Q1
Q2
LL5
1
2
3
1
2
3
1
2010-03-25