SSM6L35FE
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L35FE
○High-Speed Switching Applications
Unit: mm
1.6±0.05
○Analog Switch Applications
1.2±0.05
•
N-ch: 1.2-V drive
P-ch: 1.2-V drive
N-ch, P-ch, 2-in-1
1
2
3
6
•
•
Low ON-resistance Q1 N-ch: R = 20 Ω (max) (@V
= 1.2 V)
= 1.5 V)
= 2.5 V)
= 4.0 V)
= -1.2 V)
= -1.5 V)
= -2.5 V)
= -4.0 V)
on
GS
5
4
: R
: R
: R
=
=
=
8 Ω (max) (@V
on
on
on
GS
GS
GS
4 Ω (max) (@V
3 Ω (max) (@V
Q2 P-ch: R = 44 Ω (max) (@V
on
GS
: R = 22 Ω (max) (@V
on
GS
GS
: R = 11 Ω (max) (@V
on
: R
=
8 Ω (max) (@V
GS
on
1.Source1 4.Source2
2.Gate1
3.Drain2
5.Gate2
6.Drain1
Q1 Absolute Maximum Ratings (Ta = 25°C)
ES6
Characteristics
Drain–source voltage
Symbol
Rating
Unit
JEDEC
JEITA
-
V
V
20
V
V
DSS
-
Gate–source voltage
±10
180
360
GSS
DC
I
TOSHIBA
2-2N1D
D
Drain current
mA
Pulse
I
DP
Weight: 3.0 mg (typ.)
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain–source voltage
Symbol
Rating
Unit
V
V
-20
±10
V
V
DSS
Gate–source voltage
GSS
DC
I
-100
-200
D
Drain current
mA
Pulse
I
DP
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
Characteristic
Symbol
P (Note 1)
Rating
Unit
Drain power dissipation
Channel temperature
150
150
mW
°C
D
T
ch
Storage temperature range
T
stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
1
2008-03-21