5秒后页面跳转
SSM6L35FE(TPL3) PDF预览

SSM6L35FE(TPL3)

更新时间: 2024-01-01 14:17:36
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 218K
描述
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,180MA I(D),SOT-363VAR

SSM6L35FE(TPL3) 数据手册

 浏览型号SSM6L35FE(TPL3)的Datasheet PDF文件第2页浏览型号SSM6L35FE(TPL3)的Datasheet PDF文件第3页浏览型号SSM6L35FE(TPL3)的Datasheet PDF文件第4页浏览型号SSM6L35FE(TPL3)的Datasheet PDF文件第5页浏览型号SSM6L35FE(TPL3)的Datasheet PDF文件第6页浏览型号SSM6L35FE(TPL3)的Datasheet PDF文件第7页 
SSM6L35FE  
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type  
SSM6L35FE  
High-Speed Switching Applications  
Unit: mm  
1.6±0.05  
Analog Switch Applications  
1.2±0.05  
N-ch: 1.2-V drive  
P-ch: 1.2-V drive  
N-ch, P-ch, 2-in-1  
1
2
3
6
Low ON-resistance Q1 N-ch: R = 20 (max) (@V  
= 1.2 V)  
= 1.5 V)  
= 2.5 V)  
= 4.0 V)  
= -1.2 V)  
= -1.5 V)  
= -2.5 V)  
= -4.0 V)  
on  
GS  
5
4
: R  
: R  
: R  
=
=
=
8 (max) (@V  
on  
on  
on  
GS  
GS  
GS  
4 (max) (@V  
3 (max) (@V  
Q2 P-ch: R = 44 (max) (@V  
on  
GS  
: R = 22 (max) (@V  
on  
GS  
GS  
: R = 11 (max) (@V  
on  
: R  
=
8 (max) (@V  
GS  
on  
1.Source1 4.Source2  
2.Gate1  
3.Drain2  
5.Gate2  
6.Drain1  
Q1 Absolute Maximum Ratings (Ta = 25°C)  
ES6  
Characteristics  
Drain–source voltage  
Symbol  
Rating  
Unit  
JEDEC  
JEITA  
-
V
V
20  
V
V
DSS  
-
Gate–source voltage  
±10  
180  
360  
GSS  
DC  
I
TOSHIBA  
2-2N1D  
D
Drain current  
mA  
Pulse  
I
DP  
Weight: 3.0 mg (typ.)  
Q2 Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain–source voltage  
Symbol  
Rating  
Unit  
V
V
-20  
±10  
V
V
DSS  
Gate–source voltage  
GSS  
DC  
I
-100  
-200  
D
Drain current  
mA  
Pulse  
I
DP  
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)  
Characteristic  
Symbol  
P (Note 1)  
Rating  
Unit  
Drain power dissipation  
Channel temperature  
150  
150  
mW  
°C  
D
T
ch  
Storage temperature range  
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: Total rating  
Mounted on an FR4 board  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)  
1
2008-03-21  

与SSM6L35FE(TPL3)相关器件

型号 品牌 描述 获取价格 数据表
SSM6L35FE(TPL3,F) TOSHIBA TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,180MA I(D),SOT-363VAR

获取价格

SSM6L35FE,LM(B TOSHIBA Small Signal Field-Effect Transistor, 0.18A I(D), 20V, 2-Element, N-Channel and P-Channel,

获取价格

SSM6L35FE,LM(T TOSHIBA Small Signal Field-Effect Transistor

获取价格

SSM6L35FU TOSHIBA TRANSISTOR 180 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, US6, 2-2J1C

获取价格

SSM6L35FU(TE85L,F) TOSHIBA TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,180MA I(D),SOT-363

获取价格

SSM6L36FE TOSHIBA High-Speed Switching Applications

获取价格