是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.36 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 1.6 A |
最大漏源导通电阻: | 0.122 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F6 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM6L40TU(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,1.6A I(D),SOT-363VAR, FET Gen | |
SSM6L56FE | TOSHIBA |
获取价格 |
N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.8 A, | |
SSM6L61NU | TOSHIBA |
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N-ch + P-ch MOSFET, 20 V/-20 V, 4.0 A/-4.0 A, | |
SSM6L807R | TOSHIBA |
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N-ch + P-ch MOSFET, 30 V/-20 V, 4 A/-4 A, 0.0 | |
SSM6L820R | TOSHIBA |
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N-ch + P-ch MOSFET, 30 V/-20 V, 4 A/-4 A, 0.0 | |
SSM6N03FE | TOSHIBA |
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High Speed Switching Applications | |
SSM6N03FE(TE85L) | TOSHIBA |
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SSM6N03FE(TE85L) | |
SSM6N03FE(TE85L,F) | TOSHIBA |
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TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,100MA I(D),TSOP | |
SSM6N03FE(TPL3) | TOSHIBA |
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SSM6N03FE(TPL3) | |
SSM6N03FE_07 | TOSHIBA |
获取价格 |
High Speed Switching Applications |