5秒后页面跳转
SSM6N03FE(TE85L,F) PDF预览

SSM6N03FE(TE85L,F)

更新时间: 2024-09-23 20:05:11
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 151K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,100MA I(D),TSOP

SSM6N03FE(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84最大漏极电流 (Abs) (ID):0.1 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.15 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

SSM6N03FE(TE85L,F) 数据手册

 浏览型号SSM6N03FE(TE85L,F)的Datasheet PDF文件第2页浏览型号SSM6N03FE(TE85L,F)的Datasheet PDF文件第3页浏览型号SSM6N03FE(TE85L,F)的Datasheet PDF文件第4页浏览型号SSM6N03FE(TE85L,F)的Datasheet PDF文件第5页 
SSM6N03FE  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM6N03FE  
High-Speed Switching Applications  
Unit: mm  
Analog Switch Applications  
Input impedance is high. Driving current is extremely low.  
Can be directly driven by a CMOS device even at low voltage due to  
low gate threshold voltage.  
High-speed switching.  
Housed in a ultra-small package which is suitable for high density  
mounting.  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 Common)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
20  
10  
V
V
DS  
Gate-source voltage  
Drain current  
V
D
GSS  
I
100  
mA  
mW  
°C  
D
Drain power dissipation  
Channel temperature  
Storage temperature  
P
(Note 1)  
150  
T
ch  
150  
JEDEC  
JEITA  
T
stg  
55 to 150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-2N1D  
Weight: 3mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating, mounted on FR4 board  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)  
0.3 mm  
Equivalent Circuit (top view)  
Marking  
6 PIN  
5 PIN  
4 PIN  
6 PIN  
5 PIN  
4 PIN  
D A  
Q1  
1 PIN  
Q2  
2 PIN  
3 PIN  
1 PIN  
2 PIN  
3 PIN  
1
2009-10-07  

与SSM6N03FE(TE85L,F)相关器件

型号 品牌 获取价格 描述 数据表
SSM6N03FE(TPL3) TOSHIBA

获取价格

SSM6N03FE(TPL3)
SSM6N03FE_07 TOSHIBA

获取价格

High Speed Switching Applications
SSM6N04FU TOSHIBA

获取价格

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N04FU(TE85L) TOSHIBA

获取价格

SSM6N04FU(TE85L)
SSM6N04FU(TE85L,F) TOSHIBA

获取价格

SSM6N04FU(TE85L,F)
SSM6N04FU_07 TOSHIBA

获取价格

High Speed Switch Applications
SSM6N05FU TOSHIBA

获取价格

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N05FU(TE85L) TOSHIBA

获取价格

SSM6N05FU(TE85L)
SSM6N05FU(TE85L,F) TOSHIBA

获取价格

SSM6N05FU(TE85L,F)
SSM6N05FU_07 TOSHIBA

获取价格

High Speed Switching Applications