是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最大漏极电流 (Abs) (ID): | 0.1 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.15 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM6N03FE(TPL3) | TOSHIBA |
获取价格 |
SSM6N03FE(TPL3) | |
SSM6N03FE_07 | TOSHIBA |
获取价格 |
High Speed Switching Applications | |
SSM6N04FU | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type | |
SSM6N04FU(TE85L) | TOSHIBA |
获取价格 |
SSM6N04FU(TE85L) | |
SSM6N04FU(TE85L,F) | TOSHIBA |
获取价格 |
SSM6N04FU(TE85L,F) | |
SSM6N04FU_07 | TOSHIBA |
获取价格 |
High Speed Switch Applications | |
SSM6N05FU | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type | |
SSM6N05FU(TE85L) | TOSHIBA |
获取价格 |
SSM6N05FU(TE85L) | |
SSM6N05FU(TE85L,F) | TOSHIBA |
获取价格 |
SSM6N05FU(TE85L,F) | |
SSM6N05FU_07 | TOSHIBA |
获取价格 |
High Speed Switching Applications |