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SSM6L13TU,LF(T PDF预览

SSM6L13TU,LF(T

更新时间: 2024-02-23 22:27:58
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
8页 247K
描述
Small Signal Field-Effect Transistor, 0.8A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

SSM6L13TU,LF(T 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code:unknown风险等级:5.74
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):0.8 A最大漏源导通电阻:0.143 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL AND P-CHANNEL表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SSM6L13TU,LF(T 数据手册

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SSM6L13TU  
TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type  
SSM6L13TU  
Power Management Switch Applications  
High-Speed Switching Applications  
Unit: mm  
2.1±0.1  
1.7±0.1  
1.8-V drive  
N–ch , P–ch 2–in–1  
Low ON–resistance: Nch  
R
R
R
R
= 235 m(max) (@V  
= 178 m(max) (@V  
= 460 m(max) (@V  
= 306 m(max) (@V  
= 1.8 V)  
= 2.5 V)  
= 1.8 V)  
= 2.5 V)  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
GS  
GS  
GS  
GS  
1
2
6
5
: Pch  
4
Q1 Absolute Maximum Ratings (Ta = 25 °C)  
3
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
20  
±12  
0.8  
1.6  
V
V
DS  
Gate-source voltage  
V
GSS  
DC  
I
D
Drain current  
A
Pulse  
I
DP  
1.Source1  
2.Gate1  
4.Source2  
5.Gate2  
3.Drain2  
6.Drain1  
Q2 Absolute Maximum Ratings (Ta = 25 °C)  
UF6  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
JEDEC  
JEITA  
V
20  
± 8  
V
V
DS  
Gate-source voltage  
V
GSS  
TOSHIBA  
2-2T1B  
DC  
I
0.8  
1.6  
D
Weight: 7 mg (typ.)  
Drain current  
A
Pulse  
I
DP  
Absolute Maximum Ratings (Q1 , Q2 Common)  
(Ta = 25 °C)  
Characteristic  
Power dissipation  
Symbol  
Rating  
Unit  
P
500  
150  
mW  
°C  
D (Note 1)  
Channel temperature  
T
ch  
Storage temperature range  
T
55 to 150  
°C  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board (total dissipation)  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
3
Q1  
KV  
Q2  
Start of commercial production  
1
2
1
2
3
2005-10  
1
2014-03-01  

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