生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
Reach Compliance Code: | unknown | 风险等级: | 5.74 |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 0.8 A | 最大漏源导通电阻: | 0.143 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F6 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SSM6L13TU_10 | TOSHIBA | TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type |
获取价格 |
|
SSM6L14FE | TOSHIBA | Power Management Switch Applications |
获取价格 |
|
SSM6L14FE(TE85L) | TOSHIBA | TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,800MA I(D),TSOP |
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|
SSM6L14FE(TE85L,F) | TOSHIBA | TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,800MA I(D),TSOP |
获取价格 |
|
SSM6L14FE(TPL3) | TOSHIBA | TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,800MA I(D),TSOP |
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|
SSM6L14FE(TPL3,F) | TOSHIBA | TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,800MA I(D),TSOP |
获取价格 |