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SSM6L14FE(TPL3) PDF预览

SSM6L14FE(TPL3)

更新时间: 2024-01-06 03:50:02
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 233K
描述
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,800MA I(D),TSOP

SSM6L14FE(TPL3) 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.92最大漏极电流 (Abs) (ID):0.8 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):0.15 W子类别:Other Transistors
表面贴装:YES

SSM6L14FE(TPL3) 数据手册

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SSM6L14FE  
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type  
SSM6L14FE  
Power Management Switch Applications  
High-Speed Switching Applications  
Unit: mm  
1.6±0.05  
N-ch: 1.5-V drive  
P-ch: 1.5-V drive  
1.2±0.05  
N-ch, P-ch, 2-in-1  
Low ON-resistance Q1 N-ch:R  
= 330 mΩ (max) (@V  
= 2.5 V)  
GS  
DS(ON)  
R
1
2
3
6
= 240 mΩ (max) (@V = 4.5 V)  
GS  
= 440 mΩ (max) (@V = -2.5 V)  
GS  
DS(ON)  
DS(ON)  
Q2 P-ch:R  
5
4
R
= 300 mΩ (max) (@V = -4.5 V)  
GS  
DS(ON)  
Q1 Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
20  
±10  
0.8  
1.6  
V
V
DSS  
Gate-source voltage  
GSS  
DC  
I
D
1.Source1  
2.Gate1  
4.Source2  
5.Gate2  
Drain current  
A
Pulse  
I
DP  
3.Drain2  
6.Drain1  
Q2 Absolute Maximum Ratings (Ta = 25°C)  
ES6  
JEDEC  
JEITA  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
20  
±8  
V
V
DSS  
TOSHIBA  
2-2N1D  
Gate-source voltage  
GSS  
DC  
I
0.72  
1.44  
Weight: 3.0 mg (typ.)  
D
Drain current  
A
Pulse  
I
DP  
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)  
Characteristics  
Power dissipation  
Symbol  
P (Note 1)  
Rating  
Unit  
150  
150  
mW  
°C  
D
Channel temperature  
T
ch  
Storage temperature range  
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated  
failure rate, etc).  
Note1: Mounted on an FR4 board. (total dissipation)  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6 )  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
Q1  
Q2  
LL5  
1
2
3
1
2
3
1
2010-03-25  

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