SSM2302N

更新时间： 2024-11-03 06:14:23

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
6页	140K
描述
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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SSM2302N 数据手册

SSM2302N

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Capable of 2.5V gate drive

Small package outline

Surface-mount package

BV_DSS

R_DS(ON)

I_D

20V

85mΩ

2.8A

SOT-23

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Drain-Source Voltage

Gate-Source Voltage

Rating

Units

V_DS

V_GS

± 12

Continuous Drain Current³, V_GS@ 4.5V

Continuous Current³, V_GS@ 4.5V

Pulsed Drain Current^1,2

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

2.8

2.2

P_D@ T_A=25°C

Total Power Dissipation

1.25

Linear Derating Factor

0.01

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

100

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

Rev.2.02 3/12/2004

www.SiliconStandard.com

1 of 6

12 3 4 5 6

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