Datasheet > SSM2303N

SSM2303N

更新时间： 2024-11-03 06:14:15

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SSC		/
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6页	138K
描述
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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SSM2303N 数据手册

SSM2303N

P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Simple drive requirement

Small package outline

Surface-mount device

BV_DSS

R_DS(ON)

I_D

-30V

240mW

- 1.7A

SOT-23

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

- 30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current^1,2

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

-1.7

-1.4

-10

P_D@ T_A=25°C

1.25

0.01

W/°C

°C

T_STG

T_J

-55 to 150

-55 to 1 50

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

100

Unit

Rthj-amb

Thermal Resistance Junction-ambient³

Max.

°C/W

Rev.2.02 3/16/2004

www.SiliconStandard.com

1 of 6

12 3 4 5 6

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