Datasheet > SSM2307GN

SSM2307GN

更新时间： 2024-11-07 06:14:23

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	190K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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SSM2307GN 数据手册

SSM2307GN

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

PRODUCT SUMMARY

BV_DSS

R_DS(ON)

I_D

-16V

60mΩ

- 4A

Simple Drive Requirement

Small Package Outline

Surface Mount Device

SOT-23

DESCRIPTION

The advanced power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-23 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

Pb-free; RoHS-compliant

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

-16

Units

V_DS

V_GS

Gate-Source Voltage

±8

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-4

-3.3

-12

P_D@T_A=25℃

Total Power Dissipation

1.38

0.01

Linear Derating Factor

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Thermal Resistance Junction-ambient³

Value

Unit

Rthj-a

Max.

℃/W

08/02/2007 Rev.1.00

www.SiliconStandard.com

12 3 4 5

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