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SSM2314GN PDF预览

SSM2314GN

更新时间: 2024-11-03 09:04:55
品牌 Logo 应用领域
SSC /
页数 文件大小 规格书
5页 292K
描述
N-channel Enhancement-mode Power MOSFET

SSM2314GN 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.76配置:Single
最大漏极电流 (Abs) (ID):3.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
湿度敏感等级:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.38 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

SSM2314GN 数据手册

 浏览型号SSM2314GN的Datasheet PDF文件第2页浏览型号SSM2314GN的Datasheet PDF文件第3页浏览型号SSM2314GN的Datasheet PDF文件第4页浏览型号SSM2314GN的Datasheet PDF文件第5页 
SSM2314GN  
N-channel Enhancement-mode Power MOSFET  
Low gate-charge  
BVDSS  
R DS(ON)  
ID  
20V  
D
S
Simple drive requirement  
Fast switching  
75mW  
3.5A  
G
Pb-free; RoHS compliant.  
DESCRIPTION  
D
The SSM2314GN is in a SOT-23-3 package, which is widely used for lower  
power commercial and industrial surface mount applications. This device is  
suitable for low-voltage applications such as DC/DC converters and and  
general switching applications.  
S
SOT-23-3  
G
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
20  
Units  
V
VDS  
VGS  
Gate-Source Voltage  
V
± 12  
ID @ TA=25°C  
ID @ TA=70°C  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1,2  
3.5  
A
2.8  
A
10  
A
PD @ TA=25°C  
Total Power Dissipation  
1.38  
W
Linear Derating Factor  
0.01  
W/°C  
°C  
°C  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
THERMAL DATA  
Symbol  
Parameter  
Value  
Unit  
R
ΘJA  
Maximum Thermal Resistance, Junction-ambient3  
90  
°C/W  
4/16/2005 Rev.2.1  
www.SiliconStandard.com  
1 of 5  

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