Datasheet > SSM2316GN

SSM2316GN

更新时间： 2024-11-29 06:14:15

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描述
N-channel Enhancement-mode Power MOSFET

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SSM2316GN 数据手册

SSM2316GN

N-channel Enhancement-mode Power MOSFET

PRODUCT SUMMARY

DESCRIPTION

The SSM2316GN acheives fast switching performance

with low gate charge without a complex drive circuit. It

is suitable for low voltage applications such as DC/DC

converters and general load-switching circuits.

BV_DSS

R_DS(ON)

I_D

30V

42mW

4.7A

The SSM2316GN is supplied in an RoHS-compliant

SOT-23-3 package, which is widely used for lower

power commercial and industrial surface mount

applications.

Pb-free; RoHS-compliant SOT-23-3

SOT-23-3

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Units

Drain-source voltage

Gate-source voltage

V_GS

± 20

I_D

Continuous drain current ³, T = 25°C

4.7

T = 70°C

3.7

I_DM

P_D

Pulsed drain current ^1,2

Total power dissipation ³, T = 25°C

1.38

Linear derating factor

0.01

W/°C

°C

T_STG

T_J

Storage temperature range

Operating junction temperature range

-55 to 150

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Units

ΘJA

Maximum thermal resistance, junction-ambient³

°C/W

Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

3.Mounted on a square inch of copper pad on FR4 board ; 270°C/W when mounted on the minimum pad area required for soldering.

6/16/2006 Rev.3.01

www.SiliconStandard.com

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