Datasheet > SSM2310

SSM2310

更新时间： 2024-11-07 06:14:23

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	600K
描述
N-Channel Enhancement Mode Power Mos.FET

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SSM2310 数据手册

SSM2310

3A, 60V,RDS(ON) 90m

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SOT-223

Description

The SSM2310 utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The SSM2310 is universally used for all commercial-

industrial surface mount applications.

Features

* Simple Drive Requirement

* Small Package Outline

Millimeter

Min. Max.

Millimeter

Min. Max.

13°TYP.

REF.

6.70

2.90

0.02

0°

7.30

3.10

0.10

10°

2.30 REF.

6.30

6.70

3.70

1.80

2 3 1 0

6.30

3.30

1.40

Date Code

0.60

0.25

0.80

0.35

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

±20

3.0

2.3

Gate-Source Voltage

VGS

Continuous Drain Current³, VGS @4.5V

ID@TA=25^oC

^oC

Continuous Drain Current, VGS @4.5V

ID@TA=70

Pulsed Drain Current^1,2

IDM

^oC

Total Power Dissipation

PD@TA=25

2.7

0.02

W/^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

^oC /W

Thermal Resistance Junction-ambient³

Rthj-a

Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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