Datasheet > SSM2304AGN

SSM2304AGN

更新时间： 2024-11-03 06:14:23

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	239K
描述
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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SSM2304AGN 数据手册

SSM2304AGN

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Simple drive requirement

Lower gate charge

BV _DSS

R _DS(ON)

I_D

30V

117mΩ

2.5A

Fast switching characteristics

SOT-23-3

Description

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SSM2304AGN is in the SOT-23-3 package, which is widely preferred for

lower power commercial and industrial surface mount applications, and is

well suited for low voltage applications such as DC/DC converters and switches.

RoHS compliant.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

± 20

Gate-Source Voltage

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

2.5

P_D@ T_A=25°C

Total Power Dissipation

1.38

Linear Derating Factor

0.01

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

3/21/2005 Rev.2.01

www.SiliconStandard.com

1 of 5

12 3 4 5

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