Datasheet > SSM2304N

SSM2304N

更新时间： 2024-11-03 06:14:23

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描述
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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SSM2304N 数据手册

SSM2304N

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Simple drive requirement

Small package outline

Surface-mount package

BV _DSS

R _DS(ON)

I _D

25V

117mΩ

2.5A

SOT-23

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Drain-Source Voltage

Gate-Source Voltage

Rating

Units

V_DS

V_GS

±20

Continuous Drain Current³, V_GS@ 4.5V

Pulsed Drain Current^1,2

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

2.5

P_D@ T_A=25°C

Total Power Dissipation

1.25

Linear Derating Factor

0.01

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

100

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

Rev.2.02 3/11/2004

www.SiliconStandard.com

1 of 6

12 3 4 5 6

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