Datasheet > SSM2305AGN

SSM2305AGN

更新时间： 2024-11-03 09:04:55

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	294K
描述
P-channel Enhancement-mode Power MOSFET

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SSM2305AGN 数据手册

SSM2305AGN

P-channel Enhancement-mode Power MOSFET

Low gate-charge

BV_DSS

R _DS(ON)

I_D

-30V

Simple drive requirement

Fast switching

80mW

-3.2A

Pb-free; RoHS compliant.

DESCRIPTION

The SSM2305AGN is in a SOT-23-3 package, which is widely used for lower

power commercial and industrial surface mount applications. This device is

suitable for low-voltage applications such as DC/DC converters and and

general switching applications.

SOT-23-3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

-30

Units

V_DS

V_GS

Gate-Source Voltage

± 12

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current^1,2

-3.2

-2.6

-10

P_D@ T_A=25°C

Total Power Dissipation

1.38

Linear Derating Factor

0.01

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Value

Unit

ΘJA

Maximum Thermal Resistance, Junction-ambient³

°C/W

2/16/2005 Rev.2.1

www.SiliconStandard.com

1 of 5

12 3 4 5

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