Datasheet > SSE110N03-03P

SSE110N03-03P

更新时间： 2024-09-13 09:05:03

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描述
110A , 30V , RDS(ON) 2.5m N-Channel Enhancement Mode MOSFET

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SSE110N03-03P 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

SSE110N03-03P 数据手册

SSE110N03-03P

110A , 30V , R_DS(ON)2.5mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

TO-220P

DESCRIPTION

These miniature surface mount MOSFETs utilize a

High Cell Density trench process to provide low R_DS(on)

and to ensure minimal power loss and heat dissipation.

FEATURES

ꢀ

Low R_DS(on)Provides Higher Efficiency and

Extends Battery Life.

ꢀ

Low Thermal impedance copper leadframe

TO-220P saves board space.

ꢀ

Fast Switching speed.

High performance trench technology.

APPLICATION

DC-DC converters and power management in portable

and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

1 2 3

Millimeter

REF.

Min.

7.90

9.45

9.87

1.06

2.60

6.30

8.35

Max.

8.10

9.65

10.47

11.50

1.46

3.00

6.70

8.75

Min.

Max.

D₂

0.75

0.66

13.50

2.44

3.50

1.15

4.30

0.95

0.86

14.50

3.44

3.70

1.45

4.70

2.7

G₁

1.60 Typ.

1.89

0.40

2.60

3.09

0.60

3.60

S₃

1.10

1.17

1.30

1.37

1.50

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current ¹

Pulsed Drain Current ²

V_GS

±20

T_C= 25°C

I_D

110

I_DM

390

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

I_S

110

P_D

300

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~175

Thermal Resistance Rating

Maximum Junction to Ambient ¹

Maximum Junction to Case

R_θJA

62.5

0.5

°C / W

R_θ

Notes

1. Package Limited.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

10-Nov-2011 Rev. A

Page 1 of 2

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