Datasheet > SSD30N10-70D

SSD30N10-70D

更新时间： 2024-09-25 12:20:19

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	398K
描述
N-Ch Enhancement Mode Power MOSFET

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SSD30N10-70D 数据手册

SSD30N10-70D

N-Ch Enhancement Mode Power MOSFET

21A, 100V, R_DS(ON)78 mΩ

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

TO-252(D-Pack)

KEY FEATURES



Low R_DS(on)trench technology

Low thermal impedance

Fast switching speed

Typical Applications



PoE Power Sourcing Equipment

PoE Powered Devices

Telecom DC/DC converters

While LED boost converters

PRODUCT SUMMARY

G E

PRODUCT SUMMARY

V_DS(V)

100

R_DS(on) m(

78 @V_GS= 10V

92 @V_GS= 4.5V

I_D(A)

H F



Drain

Millimeter

REF.

Min.

Max.

Min.

Max.



Gate

6.4

5.20

2.20

0.45

6.8

2.40

5.40

0.8

6.8

5.50

2.40

0.58

7.3

3.0

6.2

1.20

2.30 REF.

0.70

0.50

0.9

0.90

1.1

1.6

0.43

0.15

0.58



Source

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DS

RATINGS

UNIT

100

±20

Gate-Source Voltage

V_GS

Continuous Drain Current

Pulsed Drain Current ^b

I_D@T_C=25℃

I_DM

100

Continuous Source Current (Diode Conduction)

Power Dissipation

I_S

P_D@T_C=25℃

T_J, T_STG

°C

Operating Junction and Storage Temperature Range

-55 ~ 175

THERMAL RESISTANCE RATINGS

Maximum Thermal Resistance Junction-Ambient^a

R_θJA

R_θJC

°C / W

Maximum Thermal Resistance Junction-Case

3.0

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

11-Aug-2010 Rev. A

Page 1 of 4

12 3 4

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