Datasheet > SQ3418AEEV

SQ3418AEEV

更新时间： 2024-09-29 01:09:23

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威世 - VISHAY		/
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描述
Automotive N-Channel 60 V (D-S) 175 Â°C MOSFET

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SQ3418AEEV 数据手册

SQ3426EV

Vishay Siliconix

www.vishay.com

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

PRODUCT SUMMARY

V_DS(V)

0.042

0.063

• AEC-Q101 qualified

_DS(on)(Ω) at V_GS= 10 V

_DS(on)(Ω) at V_GS= 4.5 V

• 100 % R_gand UIS tested

• Material categorization:

I_D(A)

for definitions of compliance please see

www.vishay.com/doc?99912

Configuration

Single

TSOP-6 Single

(1, 2, 5, 6) D

(3) G

(4) S

N-Channel MOSFET

Top View

Marking Code: 8Q

ORDERING INFORMATION

Package

TSOP-6

Lead (Pb)-free and Halogen-free

SQ3426EV-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

Continuous Drain Current

I_D

T_C= 125 °C

Continuous Source Current (Diode Conduction)

Pulsed Drain Current ^a

I_S

I_DM

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

1.6

Maximum Power Dissipation ^a

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

Junction-to-Ambient

PCB Mount ^b

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. When mounted on 1" square PCB (FR4 material).

S15-2119-Rev. B, 07-Sep-15

Document Number: 65107

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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