Datasheet > SQ3410EV

SQ3410EV

更新时间： 2024-09-28 12:22:59

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描述
Automotive N-Channel 30 V (D-S) 175 Â°C MOSFET

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SQ3410EV 数据手册

SQ3410EV

Vishay Siliconix

www.vishay.com

Automotive N-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®Power MOSFET

• AEC-Q101 Qualified^d

PRODUCT SUMMARY

V_DS(V)

• 100 % R_gand UIS Tested

R_DS(on)() at V_GS= 10 V

0.0175

0.0213

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

R_DS(on)() at V_GS= 4.5 V

I_D(A)

Configuration

Single

(1, 2, 5, 6) D

TSOP-6

Top View

3 mm

(3) G

(4) S

2.85 mm

Marking Code: 8Gxxx

N-Channel MOSFET

ORDERING INFORMATION

Package

TSOP-6

Lead (Pb)-free and Halogen-free

SQ3410EV-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C^a

_C= 125 °C

Continuous Drain Current

I_D

6.8

Continuous Source Current (Diode Conduction)

Pulsed Drain Current^b

I_S

6.3

I_DM

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

1.6

Maximum Power Dissipation^b

P_D

_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

S12-1169-Rev. A, 28-May-12

Document Number: 67342

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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