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SPD01N50M2 PDF预览

SPD01N50M2

更新时间: 2024-11-22 19:21:07
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲晶体管
页数 文件大小 规格书
9页 118K
描述
Power Field-Effect Transistor, 0.8A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-252, 3 PIN

SPD01N50M2 技术参数

生命周期:Obsolete零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.83其他特性:AVALANCHE RATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):0.8 A最大漏极电流 (ID):0.8 A
最大漏源导通电阻:6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):11 W
最大脉冲漏极电流 (IDM):1.6 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

SPD01N50M2 数据手册

 浏览型号SPD01N50M2的Datasheet PDF文件第2页浏览型号SPD01N50M2的Datasheet PDF文件第3页浏览型号SPD01N50M2的Datasheet PDF文件第4页浏览型号SPD01N50M2的Datasheet PDF文件第5页浏览型号SPD01N50M2的Datasheet PDF文件第6页浏览型号SPD01N50M2的Datasheet PDF文件第7页 
SPU01N50M2  
SPD01N50M2  
Preliminary data  
Cool MOS Power-Transistor  
New revolutionary high voltage technology  
COOLMOS  
Power Semiconductors  
D,2  
Ultra low gate charge  
Periodic avalanche rated  
Extreme dv/dt rated  
G,1  
S,3  
Optimized capacitances  
Improved noise immunity  
Type  
V
Package  
Marking  
Ordering Code  
I
R
DS(on)  
DS  
D
SPU01N50M2 550 V 0.8 A  
SPD01N50M2  
P-TO251-3-1  
P-TO252  
01N50M2 Q67040-S4324  
01N50M2 Q67040-S4325  
5.6  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
0.8  
0.5  
C
T = 100 °C  
C
Pulsed drain current 1)  
I
1.6  
D puls  
T = 25 °C  
C
Avalanche energy, single pulse  
E
E
3
mJ  
AS  
AR  
I = 0.8 A, V = 50 V, R = 25  
D
DD  
GS  
Avalanche energy (repetitive, limited by T  
)
0.04  
jmax  
I = 0.8 A , V = 50 V  
D
DD  
Avalanche current (repetitive, limited by T  
)
I
0.8  
6
A
jmax  
AR  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = 0.8 A, V <V , di/dt = 100 A/µs,  
DSS  
S
DS  
T
= 150 °C  
jmax  
Gate source voltage  
Power dissipation  
V
V
20  
11  
GS  
P
W
tot  
T = 25 °C  
C
Operating and storage temperature  
T , T  
-55... +150  
°C  
j
stg  
1
2000-03-30  

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