是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-252AA |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | compliant | Factory Lead Time: | 1 week |
风险等级: | 5.27 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 50 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 1.8 A | 最大漏极电流 (ID): | 1.8 A |
最大漏源导通电阻: | 3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 25 W |
最大脉冲漏极电流 (IDM): | 5.4 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SPD02N50C3_08 | INFINEON |
获取价格 |
Cool MOS Power Transistor | |
SPD02N50C3BTMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
SPD02N60 | INFINEON |
获取价格 |
SIPMO Power Transistor | |
SPD02N60C3 | INFINEON |
获取价格 |
Cool MOS Power Transistor | |
SPD02N60C3_05 | INFINEON |
获取价格 |
Cool MOS Power Transistor | |
SPD02N60C3_08 | INFINEON |
获取价格 |
Cool MOS Power Transistor | |
SPD02N60C3BTMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
SPD02N60S5 | INFINEON |
获取价格 |
Cool MOS⑩ Power Transistor | |
SPD02N60S5BTMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
SPD02N80C3 | INFINEON |
获取价格 |
CoolMOS Power Transistor |