5秒后页面跳转
SPD02N50C3 PDF预览

SPD02N50C3

更新时间: 2024-11-05 22:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管脉冲局域网
页数 文件大小 规格书
11页 268K
描述
Cool MOS™ Power Transistor

SPD02N50C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantFactory Lead Time:1 week
风险等级:5.27其他特性:AVALANCHE RATED
雪崩能效等级(Eas):50 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):1.8 A最大漏极电流 (ID):1.8 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):25 W
最大脉冲漏极电流 (IDM):5.4 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SPD02N50C3 数据手册

 浏览型号SPD02N50C3的Datasheet PDF文件第2页浏览型号SPD02N50C3的Datasheet PDF文件第3页浏览型号SPD02N50C3的Datasheet PDF文件第4页浏览型号SPD02N50C3的Datasheet PDF文件第5页浏览型号SPD02N50C3的Datasheet PDF文件第6页浏览型号SPD02N50C3的Datasheet PDF文件第7页 
SPD02N50C3  
Final data  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
Ultra low gate charge  
V
@ T  
560  
3
1.8  
V
A
DS  
jmax  
R
DS(on)  
I
D
P-TO252-3-1  
Periodic avalanche rated  
Extreme dv/dt rated  
Ultra low effective capacitances  
Improved transconductance  
Type  
SPD02N50C3  
Package  
P-TO252-3-1 Q67040-S4570  
Ordering Code  
Marking  
02N50C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
1.8  
1.1  
5.4  
50  
C
T = 100 °C  
C
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
D puls  
p
jmax  
mJ  
E
AS  
I = 1.35 A, V = 50 V  
Avalanche energy, repetitive t limited by T  
D
DD  
1)  
jmax  
E
0.07  
1.8  
AR  
AR  
I = 1.8 A, V = 50 V  
D
DD  
A
V
Avalanche current, repetitive t limited by T  
Gate source voltage  
I
AR  
jmax AR  
V
±20  
±30  
25  
GS  
V
P
Gate source voltage AC (f >1Hz)  
GS  
tot  
W
°C  
Power dissipation, T = 25°C  
C
Operating and storage temperature  
T , T  
-55... +150  
j
stg  
Page 1  
2003-10-07  

与SPD02N50C3相关器件

型号 品牌 获取价格 描述 数据表
SPD02N50C3_08 INFINEON

获取价格

Cool MOS Power Transistor
SPD02N50C3BTMA1 INFINEON

获取价格

Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal
SPD02N60 INFINEON

获取价格

SIPMO Power Transistor
SPD02N60C3 INFINEON

获取价格

Cool MOS™ Power Transistor
SPD02N60C3_05 INFINEON

获取价格

Cool MOS Power Transistor
SPD02N60C3_08 INFINEON

获取价格

Cool MOS Power Transistor
SPD02N60C3BTMA1 INFINEON

获取价格

Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal
SPD02N60S5 INFINEON

获取价格

Cool MOS⑩ Power Transistor
SPD02N60S5BTMA1 INFINEON

获取价格

Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal
SPD02N80C3 INFINEON

获取价格

CoolMOS Power Transistor