Datasheet > 晶体管 > 功率场效应晶体管> SPD03N60C3AT

SPD03N60C3AT

更新时间： 2024-09-16 12:59:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
12页	291K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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SPD03N60C3AT 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.67
Base Number Matches：	1

SPD03N60C3AT 数据手册

SPD03N60C3

SPU03N60C3

Final data

Cool MOS™ Power Transistor

@ T

650

1.4

3.2

Ω

jmax

Feature

DS(on)

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

P-TO251

P-TO252

• High peak current capability

• Improved transconductance

Type

SPD03N60C3

SPU03N60C3

Package

P-TO252

P-TO251

Ordering Code

Q67040-S4421

Marking

03N60C3

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

3.2

T = 100 °C

9.6

100

Pulsed drain current, t limited by T

Avalanche energy, single pulse

jmax

D puls

I = 2.4 A, V = 50 V

Avalanche energy, repetitive t limited by T

jmax

0.2

3.2

I = 3.2 A, V = 50 V

Avalanche current, repetitive t limited by T

Gate source voltage static

jmax AR

±20

±30

Gate source voltage AC (f >1Hz)

tot

°C

Power dissipation, T = 25°C

Operating and storage temperature

T , T

-55... +150

stg

Page 1

2003-10-02

12 3 4 5 6 7...12

中文翻译

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与SPD03N60C3AT相关器件

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