SPD04P10PL

更新时间： 2024-09-16 06:13:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	406K
描述
SIPMOS® Power-Transistor Features P-Channel Enhancement mode

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中文翻译

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数据手册

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SPD04P10PL 数据手册

SPD04P10PL G

SIPMOS^®Power-Transistor

Product Summary

Features

V _DS

-100

850

-4.2

• P-Channel

R _DS(on),max

I _D

mΩ

• Enhancement mode

• Logic level

• Avalanche rated

PG-TO-252-3

• Pb-free lead plating; RoHS compliant

Type

Package

Marking

Lead free

Packing

Tape and reel information

SPD04P10PL G PG-TO252-3

04P10PL

Yes

Non dry

1000 pcs / reel

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

steady state

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

-4.2

Continuous drain current

3.0

I _D,pulse

E _AS

-16.8

Pulsed drain current

±20

I _D=-4.2 A, R _GS=25 Ω

Avalanche energy, single pulse

Gate source voltage

V _GS

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

-55 ... 175

1A (250 V to 500 V)

260 °C

Operating and storage temperature

ESD class

JESD22-A114-HBM

Soldering temperature

IEC climatic category; DIN IEC 68-1

55/175/56

Rev 1.5

page 1

2009-02-16

12 3 4 5 6 7...9

中文翻译

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