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SPD04N50C3BT PDF预览

SPD04N50C3BT

更新时间: 2024-09-16 13:13:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 261K
描述
Power Field-Effect Transistor,

SPD04N50C3BT 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.72峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SPD04N50C3BT 数据手册

 浏览型号SPD04N50C3BT的Datasheet PDF文件第2页浏览型号SPD04N50C3BT的Datasheet PDF文件第3页浏览型号SPD04N50C3BT的Datasheet PDF文件第4页浏览型号SPD04N50C3BT的Datasheet PDF文件第5页浏览型号SPD04N50C3BT的Datasheet PDF文件第6页浏览型号SPD04N50C3BT的Datasheet PDF文件第7页 
SPD04N50C3  
Final data  
Cool MOS™ Power Transistor  
V
@ T  
560  
0.95  
4.5  
V
A
DS  
jmax  
Feature  
R
DS(on)  
New revolutionary high voltage technology  
Ultra low gate charge  
Periodic avalanche rated  
I
D
P-TO252-3-1  
Extreme dv/dt rated  
Ultra low effective capacitances  
Improved transconductance  
Type  
Package  
Ordering Code  
Marking  
SPD04N50C3  
P-TO252-3-1 Q67040-S4574  
04N50C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
4.5  
2.8  
C
T = 100 °C  
C
13.5  
130  
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
E
p
jmax  
D puls  
mJ  
AS  
I = 3.4 A, V = 50 V  
Avalanche energy, repetitive t limited by T  
D
DD  
1)  
jmax  
E
0.4  
4.5  
AR  
AR  
I = 4.5 A, V = 50 V  
D
DD  
A
V
Avalanche current, repetitive t limited by T  
Gate source voltage  
I
AR  
jmax AR  
V
±20  
±30  
50  
GS  
V
P
Gate source voltage AC (f >1Hz)  
GS  
tot  
W
°C  
Power dissipation, T = 25°C  
C
Operating and storage temperature  
T , T  
-55... +150  
j
stg  
Page 1  
2003-10-07  

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