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SPD02N60S5BTMA1 PDF预览

SPD02N60S5BTMA1

更新时间: 2024-11-22 15:52:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲晶体管
页数 文件大小 规格书
11页 714K
描述
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3

SPD02N60S5BTMA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.72
其他特性:AVALANCHE RATED雪崩能效等级(Eas):50 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):1.8 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):3.2 A
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SPD02N60S5BTMA1 数据手册

 浏览型号SPD02N60S5BTMA1的Datasheet PDF文件第2页浏览型号SPD02N60S5BTMA1的Datasheet PDF文件第3页浏览型号SPD02N60S5BTMA1的Datasheet PDF文件第4页浏览型号SPD02N60S5BTMA1的Datasheet PDF文件第5页浏览型号SPD02N60S5BTMA1的Datasheet PDF文件第6页浏览型号SPD02N60S5BTMA1的Datasheet PDF文件第7页 
SPU02N60S5  
SPD02N60S5  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
V
600  
3
1.8  
V
A
DS  
R
DS(on)  
I
D
Ultra low gate charge  
PG-TO252  
PG-TO251  
Periodic avalanche rated  
Extreme dv/dt rated  
2
3
Ultra low effective capacitances  
Improved transconductance  
3
1
2
1
Type  
SPU02N60S5  
SPD02N60S5  
Package  
PG-TO251  
PG-TO252  
Ordering Code  
Q67040-S4226  
Q67040-S4213  
Marking  
02N60S5  
02N60S5  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T
= 25 °C  
= 100 °C  
1.8  
1.1  
3.2  
50  
C
C
T
Pulsed drain current,  
t
limited by  
T
jmax  
I
E
p
D puls  
mJ  
Avalanche energy, single pulse  
= 1.35 A, = 50 V  
AS  
I
V
DD  
D
1)  
E
0.07  
1.8  
Avalanche energy, repetitive  
t
limited by  
limited by  
T
jmax  
AR  
AR  
I
= 1.8 A,  
V
= 50 V  
D
DD  
A
V
Avalanche current, repetitive  
t
T
I
AR  
jmax AR  
Gate source voltage  
V
±20  
30  
25  
GS  
V
P
T
Gate source voltage AC (f >1Hz)  
GS  
tot  
Power dissipation, T = 25°C  
W
°C  
C
Operating and storage temperature  
,
T
-55... +150  
j
stg  
Page 1  
Rev. 2.5  
2008-04-07  

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