SPD01N60C3

更新时间： 2024-11-21 22:21:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	280K
描述
Cool MOS⑩ Power Transistor

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中文翻译

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数据手册

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SPD01N60C3 数据手册

SPU01N60C3

SPD01N60C3

Rev. 2.0

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

@ T

650

0.8

Ω

jmax

DS(on)

P-TO252

P-TO251-3-1

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

Type

SPU01N60C3

SPD01N60C3

Package

P-TO251-3-1 Q67040-S4193

P-TO252 Q67040-S4188

Ordering Code

Marking

01N60C3

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

0.8

0.5

1.6

T = 100 °C

Pulsed drain current, t limited by T

Avalanche energy, single pulse

jmax

D puls

I = 0.6 A, V = 50 V

0.01

0.8

Avalanche energy, repetitive t limited by T

jmax

I = 0.8 A, V = 50 V

Avalanche current, repetitive t limited by T

jmax AR

Gate source voltage static

±20

Gate source voltage AC (f >1Hz)

tot

Power dissipation, T = 25°C

°C

Operating and storage temperature

T , T

-55... +150

stg

Page 1

2004-03-01

12 3 4 5 6 7...10

中文翻译

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