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SPD01N60C3 PDF预览

SPD01N60C3

更新时间: 2024-11-05 22:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
10页 280K
描述
Cool MOS⑩ Power Transistor

SPD01N60C3 数据手册

 浏览型号SPD01N60C3的Datasheet PDF文件第2页浏览型号SPD01N60C3的Datasheet PDF文件第3页浏览型号SPD01N60C3的Datasheet PDF文件第4页浏览型号SPD01N60C3的Datasheet PDF文件第5页浏览型号SPD01N60C3的Datasheet PDF文件第6页浏览型号SPD01N60C3的Datasheet PDF文件第7页 
SPU01N60C3  
SPD01N60C3  
Rev. 2.0  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
Ultra low gate charge  
Periodic avalanche rated  
V
@ T  
650  
6
0.8  
V
A
DS  
jmax  
R
DS(on)  
I
D
P-TO252  
P-TO251-3-1  
Extreme dv/dt rated  
Ultra low effective capacitances  
Improved transconductance  
Type  
SPU01N60C3  
SPD01N60C3  
Package  
P-TO251-3-1 Q67040-S4193  
P-TO252 Q67040-S4188  
Ordering Code  
Marking  
01N60C3  
01N60C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
0.8  
0.5  
1.6  
20  
C
T = 100 °C  
C
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
E
p
jmax  
D puls  
mJ  
AS  
I = 0.6 A, V = 50 V  
D
DD  
1)  
E
0.01  
0.8  
Avalanche energy, repetitive t limited by T  
AR  
AR  
jmax  
I = 0.8 A, V = 50 V  
D
DD  
A
V
Avalanche current, repetitive t limited by T  
I
AR  
jmax AR  
Gate source voltage static  
V
±20  
30  
11  
GS  
V
P
Gate source voltage AC (f >1Hz)  
GS  
tot  
Power dissipation, T = 25°C  
W
C
°C  
Operating and storage temperature  
T , T  
-55... +150  
j
stg  
Page 1  
2004-03-01  

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