生命周期: | Obsolete | 零件包装代码: | TO-252AA |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.45 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 20 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 0.8 A |
最大漏极电流 (ID): | 0.8 A | 最大漏源导通电阻: | 6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252AA |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 11 W | 最大脉冲漏极电流 (IDM): | 1.6 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SPD02N50C3 | INFINEON |
获取价格 |
Cool MOS Power Transistor | |
SPD02N50C3_08 | INFINEON |
获取价格 |
Cool MOS Power Transistor | |
SPD02N50C3BTMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
SPD02N60 | INFINEON |
获取价格 |
SIPMO Power Transistor | |
SPD02N60C3 | INFINEON |
获取价格 |
Cool MOS Power Transistor | |
SPD02N60C3_05 | INFINEON |
获取价格 |
Cool MOS Power Transistor | |
SPD02N60C3_08 | INFINEON |
获取价格 |
Cool MOS Power Transistor | |
SPD02N60C3BTMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
SPD02N60S5 | INFINEON |
获取价格 |
Cool MOS⑩ Power Transistor | |
SPD02N60S5BTMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal |