Datasheet > SP8J3FU6TB

SP8J3FU6TB

更新时间： 2024-09-28 19:46:39

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
5页	56K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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中文翻译

获取价格

技术参数
数据手册
替代型号

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SP8J3FU6TB 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.81
Base Number Matches：	1

SP8J3FU6TB 数据手册

SP8J3

Transistors

4V Drive Pch+Pch MOS FET

SP8J3

zStructure

zExternal dimensions (Unit : mm)

Silicon P-channel MOS FET

SOP8

5.0

1.75

0.4

)

( )

(

zFeatures

1) Low On-resistance. (100m: at 4.5V)

2) High Power Package. (P^D=2.0W)

3) High speed switching.

( )

4) Low voltage drive. (4V)

0.2

1.27

1pin mark

Each lead has same dimensions

zApplications

Power switching, DC-DC converter

zPackaging specifications

zInner circuit

(8)

(7)

(6)

(5)

Package

Taping

Type

Code

Basic ordering unit (pieces)

2500

∗2

SP8J3

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

∗1

(1)

(2)

(3)

(4)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25qC)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

−30

Unit

Continuous

3.5

Drain current

Pulsed

∗1

I_DP

Source current

(Body diode)

Continuous

I_S

−1.6

−14

2.0

∗1

∗2

Pulsed

I_SP

Total power dissipation

Channel temperature

P_D

°C

Tch

Tstg

150

Range of Storage temperature

∗1 Pw≤10μs, Duty cycle≤1%

∗2 Mounted on a ceramic board

−55 to +150

zThermal resistance

Parameter

Symbol

Rth(ch-a) ^∗

Limits

62.5

Unit

Channel to ambient

∗ Mounted on a ceramic board.

°C / W

Rev.A

1/4

12 3 4 5

中文翻译

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SP8J3FU6TB 替代型号

型号	品牌	替代类型	描述	数据表
IRF7306TRPBF	INFINEON	功能相似	Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-
IRF7306PBF	INFINEON	功能相似	HEXFET㈢Power MOSFET

与SP8J3FU6TB相关器件

型号	品牌	获取价格	描述	数据表
SP8J3TB	ROHM	获取价格	Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, P-Channel, Silicon, Met
SP8J4	ROHM	获取价格	Switching (−30V, −2.0A)
SP8J4TB	ROHM	获取价格	暂无描述
SP8J5	ROHM	获取价格	4V Drive Pch+Pch MOS FET
SP8J5TB	ROHM	获取价格	Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, P-Channel, Silicon, Meta
SP8J65TB	ROHM	获取价格	Power Field-Effect Transistor, 7A I(D), 30V, 0.029ohm, 2-Element, P-Channel, Silicon, Meta
SP8K1	ROHM	获取价格	Switching (30V, 5.0A)
SP8K1FU6TB	ROHM	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
SP8K2	ROHM	获取价格	Switching (30V, 6.0A)
SP8K22	ROHM	获取价格	Switching (45V, 4.5A)