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SN74AUP1G74DCUR PDF预览

SN74AUP1G74DCUR

更新时间: 2024-11-16 05:24:51
品牌 Logo 应用领域
德州仪器 - TI 触发器锁存器逻辑集成电路光电二极管PC
页数 文件大小 规格书
17页 259K
描述
LOW-POWER SINGLE POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

SN74AUP1G74DCUR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:VSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:0.87Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:273562
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (8-Pin)Samacsys Footprint Name:SN74AUP1G74DCUR
Samacsys Released Date:2018-04-10 07:13:52Is Samacsys:N
系列:AUP/ULP/VJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:2.3 mm
负载电容(CL):30 pF逻辑集成电路类型:D FLIP-FLOP
最大频率@ Nom-Sup:40000000 Hz最大I(ol):0.004 A
湿度敏感等级:1位数:1
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:COMPLEMENTARY
封装主体材料:PLASTIC/EPOXY封装代码:VSSOP
封装等效代码:TSSOP8,.12,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH包装方法:TR
峰值回流温度(摄氏度):260电源:1.2/3.3 V
最大电源电流(ICC):0.0009 mAProp。Delay @ Nom-Sup:27 ns
传播延迟(tpd):27 ns认证状态:Not Qualified
座面最大高度:0.9 mm子类别:FF/Latches
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):0.8 V
标称供电电压 (Vsup):1.2 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED触发器类型:POSITIVE EDGE
宽度:2 mm最小 fmax:180 MHz
Base Number Matches:1

SN74AUP1G74DCUR 数据手册

 浏览型号SN74AUP1G74DCUR的Datasheet PDF文件第2页浏览型号SN74AUP1G74DCUR的Datasheet PDF文件第3页浏览型号SN74AUP1G74DCUR的Datasheet PDF文件第4页浏览型号SN74AUP1G74DCUR的Datasheet PDF文件第5页浏览型号SN74AUP1G74DCUR的Datasheet PDF文件第6页浏览型号SN74AUP1G74DCUR的Datasheet PDF文件第7页 
SN74AUP1G74  
LOW-POWER SINGLE POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP  
WITH CLEAR AND PRESET  
www.ti.com  
SCES644AMARCH 2006REVISED SEPTEMBER 2006  
FEATURES  
Available in the Texas Instruments  
NanoStar™ and NanoFree™ Packages  
Optimized for 3.3-V Operation  
3.6-V I/O Tolerant to Support Mixed-Mode  
Signal Operation  
Low Static-Power Consumption:  
ICC = 0.9 µA Max  
tpd = 4.3 ns Max at 3.3 V  
Low Dynamic-Power Consumption:  
Cpd = 4.3 pF Typ at 3.3 V  
Suitable for Point-to-Point Applications  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
Low Input Capacitance: Ci = 1.5 pF Typ  
Low Noise – Overshoot and Undershoot  
<10% of VCC  
ESD Performance Tested Per JESD 22  
– 2000-V Human-Body Model  
(A114-B, Class II)  
Ioff Supports Partial-Power-Down Mode  
Operation  
– 200-V Machine Model (A115-A)  
Schmitt-Trigger Action Allows Slow Input  
Transition and Better Switching Noise  
Immunity at the Input (Vhys = 250 mV Typ at  
3.3 V)  
– 1000-V Charged-Device Model (C101)  
ESD Protection Exceeds ±5000 V With  
Human-Body Model  
Wide Operating VCC Range of 0.8 V to 3.6 V  
DCT PACKAGE  
(TOP VIEW)  
DCU PACKAGE  
(TOP VIEW)  
YEP OR YZP PACKAGE  
(BOTTOM VIEW)  
4 5  
Q
CLR  
PRE  
GND  
Q
D
CLK  
CLK  
D
Q
GND  
V
CC  
1
2
3
4
8
7
6
5
1
2
8
7
CLK  
D
V
CC  
3 6  
PRE  
CLR  
Q
2
7
PRE  
1 8  
V
CC  
3
4
6
5
Q
CLR  
Q
GND  
See mechanical drawings for dimensions.  
DESCRIPTION/ORDERING INFORMATION  
The AUP family is TI's premier solution to the industry's low-power needs in battery-powered portable  
applications. This family ensures a very low static- and dynamic-power consumption across the entire VCC range  
of 0.8 V to 3.6 V, resulting in increased battery life (see Figure 1). This product also maintains excellent signal  
integrity (see the very low undershoot and overshoot characteristics shown in Figure 2).  
ORDERING INFORMATION  
TA  
PACKAGE(1)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING(2)  
NanoStar™ – WCSP (DSBGA)  
0.23-mm Large Bump – YEP  
Reel of 3000  
Reel of 3000  
SN74AUP1G74YEPR  
_ _ _HS_  
NanoFree™ – WCSP (DSBGA)  
0.23-mm Large Bump – YZP (Pb-free)  
SN74AUP1G74YZPR  
–40°C to 85°C  
SSOP – DCT  
Reel of 3000  
Reel of 3000  
SN74AUP1G74DCTR  
SN74AUP1G74DCUR  
H74_ _ _  
H74_  
VSSOP – DCU  
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
(2) DCT: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site.  
DCU: The actual top-side marking has one additional character that designates the assembly/test site.  
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following  
character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, = Pb-free).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar, NanoFree are trademarks of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2006, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

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