是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Not Recommended | 零件包装代码: | TO-247 |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.12 |
雪崩能效等级(Eas): | 2500 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1000 V | 最大漏极电流 (ID): | 21 A |
最大漏源导通电阻: | 0.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 84 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SML100W18 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML1012A258R | SEME-LAB |
获取价格 |
FAST RECOVERY EPITAXIAL DIODE IN A HERMETIC TO-258 METAL PACKAGE | |
SML10-12A-258R | SEME-LAB |
获取价格 |
FAST RECOVERY EPITAXIAL DIODE IN A HERMETIC TO?258 METAL PACKAGE | |
SML1016 | SANKEN |
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Bicolor LEDs | |
SML1016_08 | SANKEN |
获取价格 |
5phi Round Standard Bicolor LEDs | |
SML10B75 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML10B75XX | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML10J144 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML10J225 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML10L100 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |