Datasheet > SML10L100

SML10L100

更新时间： 2024-11-29 22:07:47

品牌	Logo	应用领域
SEME-LAB		高压高电压电源
页数	文件大小	规格书
2页	24K
描述
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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SML10L100 数据手册

SML10L100

TO–264AA Package Outline.

Dimensions in mm (inches)

1.80 (0.071)

2.01 (0.079)

N–CHANNEL

4.60 (0.181)

5.21 (0.205)

19.51 (0.768)

26.49 (0.807)

3.10 (0.122)

3.48 (0.137)

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

V_DSS

100V

100A

2.29 (0.090)

2.69 (0.106)

I_D(cont)

2.79 (0.110)

3.18 (0.125)

R_DS(on)0.011

0.48 (0.019)

0.84 (0.033)

0.76 (0.030)

1.30 (0.051)

• Faster Switching

• Lower Leakage

2.59 (0.102)

3.00 (0.118)

5.45 (0.215) BSC

2 plcs.

• 100% Avalanche Tested

• Popular TO–264 Package

Pin 1 – Gate

Pin 2 – Drain

Pin 3 – Source

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Drain – Source Voltage

100

DSS

Continuous Drain Current

Pulsed Drain Current

400

Gate – Source Voltage

±30

Gate – Source Voltage Transient

±40

GSM

Total Power Dissipation @ T

Derate Linearly

= 25°C

520

case

4.16

–55 to 150

300

W/°C

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

T , T

STG

°C

Avalanche Current (Repetitive and Non-Repetitive)

100

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

2500

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Starting T = 25°C, L = 500µH, R = 25 , Peak I = 100A

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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