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SMJ61CD64-55FG PDF预览

SMJ61CD64-55FG

更新时间: 2024-09-14 15:51:51
品牌 Logo 应用领域
德州仪器 - TI 静态存储器内存集成电路
页数 文件大小 规格书
10页 243K
描述
IC,SRAM,64KX1,CMOS,LLCC,CERAMIC

SMJ61CD64-55FG 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:QCCN, LCC(UNSPEC)Reach Compliance Code:not_compliant
风险等级:5.88最长访问时间:55 ns
I/O 类型:SEPARATE内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:1
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:64KX1
输出特性:3-STATE封装主体材料:CERAMIC
封装代码:QCCN封装等效代码:LCC(UNSPEC)
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified筛选级别:38535Q/M;38534H;883B
最大待机电流:0.00001 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.12 mA
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:NO LEAD端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SMJ61CD64-55FG 数据手册

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