Datasheet > SM8S12A/2E

SM8S12A/2E

更新时间： 2024-11-25 06:41:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	89K
描述
Trans Voltage Suppressor Diode, 12V V(RWM), Unidirectional,

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中文翻译

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SM8S12A/2E 数据手册

SM8S Series

New Product

Vishay Semiconductors

formerly General Semiconductor

Surface Mount Automotive Transient Voltage Suppressors

Stand-off Voltage 10 to 43V

Peak Pulse Power 6600W (10/1000µs)

5200W (10/10,000µs)

DO-218AB

0.628(16.0)

0.592(15.0)

0.539(13.7)

0.524(13.3)

0.116(3.0)

0.093(2.4)

0.413(10.5) 0.342(8.7)

0.374(9.5) 0.327(8.3)

Mounting Pad Layout

0.091(2.3)

0.067(1.7)

0.366(9.3)

0.343(8.7)

0.116(3.0)

0.093(2.4)

0.413(10.5)

0.374(9.5)

0.406(10.3)

0.382(9.7)

Dimensions in

inches and (millimeters)

LEAD 1

0.150(3.8)

0.366(9.3)

0.138(3.5)

0.098(2.5)

0.126(3.2)

0.343(8.7)

0.197(5.0)

0.185(4.7)

0.606(15.4)

0.583(14.8)

0.028(0.7)

0.020(0.5)

0.016 (0.4) Min.

Patent #’s:

4,980,315

5,166,769

5,278,095

0.098(2.5)

0.059(1.5)

LEAD 2/METAL HEATSINK

Features

Mechanical Data

• Ideally suited for load dump protection

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• High temperature stability due to unique oxide passiva-

tion and patented PAR^®construction

• Integrally molded heatsink provides a very low thermal

resistance for maximum heat dissipation

• Low leakage current at T_J= 175°C

Case: Molded plastic body, surface mount with heatsink

integrally mounted in the encapsulation

Terminals: Plated, solderable per MIL-STD-750, Method 2026

Polarity: Heatsink is anode

Mounting Position: Any

Weight: 0.091 oz., 2.58 g

Packaging codes/options:

• High temperature soldering guaranteed:

260°C for 10 seconds at terminals

• Meets ISO7637-2 surge spec.

2D/750 per 13" Reel (16mm Tape),

anode towards sprocket hole, 4.5K/box

2E/750 per 13" Reel (16mm Tape),

cathode towards sprocket hole, 4.5K/box

• Low forward voltage drop

Maximum Ratings and Thermal Characteristics(T = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak pulse power dissipation with 10/1000µs waveform

10/10,000µs waveform

6600

5200

P_PPM

Steady state power dissipation

P_D

I_PPM

8.0

See Table 1

700

Peak pulse current with a 10/1000µs waveform⁽¹⁾

Peak forward surge current, 8.3ms single half sine-wave

Typical thermal resistance junction to case

Operating junction and storage temperature range

I_FSM

R_θJC

0.90

°C/W

°C

T_J, T_STG

-55 to +175

Notes: (1) Non-repetitive current pulse derated above T_A=25°C

Document Number 88387

04-Jun-04

www.vishay.com

12 3 4

中文翻译

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与SM8S12A/2E相关器件

型号	品牌	获取价格	描述	数据表
SM8S12A-2E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5200W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM8S12AD	SOCAY	获取价格	Surface Mount Transient Voltage Suppressors (TVS)
SM8S12A-E3/2D	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5200W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM8S12AHE3	MCC	获取价格	Tape&Reel: 750pcs/Reel;
SM8S12AHE3_A/I	VISHAY	获取价格	TVS DIODE 12V 19.9V DO218AB
SM8S12A-LF-T13	PROTEC	获取价格	Trans Voltage Suppressor Diode, 6600W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM8S12AQ	YANGJIE	获取价格	DO-218AB
SM8S12A-Q1	ANBON	获取价格	DO-218AB
SM8S12A-T13	PROTEC	获取价格	Trans Voltage Suppressor Diode
SM8S12A-T750	PROTEC	获取价格	Trans Voltage Suppressor Diode,

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