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SM8S12A-T750 PDF预览

SM8S12A-T750

更新时间: 2024-11-24 15:51:39
品牌 Logo 应用领域
PROTEC 二极管
页数 文件大小 规格书
8页 395K
描述
Trans Voltage Suppressor Diode,

SM8S12A-T750 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.71
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e3
湿度敏感等级:1峰值回流温度(摄氏度):245
端子面层:Matte Tin (Sn)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SM8S12A-T750 数据手册

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SM8S SERIES  
Only One Name Means ProTek’Tion™  
HIGH POWER TVS ARRAY  
APPLICATIONS  
Digital Audio Tuner for Automoꢀve  
Automoꢀve Entertainment Systems  
Automoꢀve Navigaꢀon Systems  
FEATURES  
Juncꢀon Passivaꢀon Opꢀmized Design Passivated Anisotropic Recꢀ-  
fier Technology  
• TJ = 175°C Capability Suitable for High Reliability and Automoꢀve  
Requirements  
Unidirecꢀonal Configuraꢀon  
Low Forward Voltage Drop  
High Surge Capability  
6600 Waꢁs Peak Pulse Power per Line (tp = 10/1000µs)  
Meets ISO7637-2 Surge Specificaꢀon (Varied by Test Condiꢀon)  
Meets MSL Level 1, Per J-STD-020, LF Maximum Peak of 245°C  
Available in Mulꢀple Voltages  
RoHS Compliant  
REACH Compliant  
MECHANICAL CHARACTERISTICS  
Case: DO-218AB Package  
Terminals: Maꢁe Tin Plated Leads, Solderable Per J-STD-002 and JESD  
22-B102  
Approximate Weight: 2.58 grams  
Solder Reflow Temperature - 260°C for 10 seconds at terminals  
24mm Tape and Reel Per EIA Standard 481  
Flammability Raꢀng UL 94V-0  
Polarity: Heatsink is Anode  
MAXIMUM RATINGS @ 25°C Unless Otherwise Specified  
PARAMETER  
SYMBOL  
VALUE  
-55 to 175  
-55 to 175  
6600  
UNITS  
°C  
Operaꢀng Juncꢀon Temperature  
Storage Temperature  
TJ  
TSTG  
PPPM  
IFSM  
PD  
°C  
Peak Pulse Power Dissipaꢀon (tp =10/1000µs)  
Waꢁs  
Amps  
Waꢁs  
°C/W  
Peak Forward Surge Current, 8.3ms single half sinewave  
Power Dissipaꢀon on Infinite Heaksink, TC = 25°C (Figure 2)  
Typical Thermal Resistance, Juncꢀon to Case  
700  
8.0  
RΘJC  
0.90  
www.protekdevices.com  
05453.R9 5/17  
Page 1  

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