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SM8S13 PDF预览

SM8S13

更新时间: 2024-02-20 18:38:33
品牌 Logo 应用领域
优恩 - UNSEMI 二极管测试电子局域网
页数 文件大小 规格书
4页 2698K
描述
用于汽车电子保护,可通过ISO7637-5A5B测试标准。

SM8S13 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.58其他特性:EXCELLENT CLAMPING CAPABILITY
最大击穿电压:15.9 V最小击穿电压:14.4 V
外壳连接:ANODE配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
最大非重复峰值反向功率耗散:6600 W元件数量:2
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:8 W最大重复峰值反向电压:13 V
表面贴装:YES技术:AVALANCHE
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SM8S13 数据手册

 浏览型号SM8S13的Datasheet PDF文件第2页浏览型号SM8S13的Datasheet PDF文件第3页浏览型号SM8S13的Datasheet PDF文件第4页 
Surface Mount Transient Voltage Suppressors (TVS)  
SM8S Series  
10 To 43 V  
6600W  
Description  
The SM8S series is designed specifically to protect sensitive  
electronic equipment from voltage transients induced by lightning  
and other transient voltage events.  
Features  
u
Junction passivation optimized design passivated anisotropic  
rectifier technology  
u
TJ=175°C capability suitable for high reliability and automotive  
requirement  
DO-218AB  
u
u
u
u
u
u
Available in uni-directional polarity only  
Low leakage current  
Functional Diagram  
Low forward voltage drop  
High surge capability  
Meets ISO7637-2 surge specification (varied by test condition)  
Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C  
Cathode  
Anode  
Uni-direction  
u
u
AEC-Q101 qualified  
Compliant to RoHS Directive 2002/95/EC and in accordance  
to WEEE 2002/96/EC  
Primary Characteristics  
VWM  
PPPM (10/1000µs)  
PPPM (10 /10000μs)  
PD  
10V to 43V  
Applications  
Use in sensitive electronics protection against voltage transients  
induced by inductive load switching and lighting, especially for  
automotive load dump protection application.  
6600W  
5200W  
8W  
IFSM  
700A  
TJ max.  
175°C  
Maximum Ratings and Thermal Characteristics (TA=25unless otherwise noted)  
Parameter  
with 10/1000µs waveform  
Symbol  
PPPM  
Value  
6600  
Unit  
Peak Pulse Power Dissipation  
Watts  
with 10/10000µs waveform  
5200  
Power Dissipation on Infinite Heat Sink at TA=25°C (Fig.1)  
Peak Pulse Current with a 10/1000µs waveform  
PD  
8.0  
Watt  
Amps  
Amps  
°C  
(1)  
IPPM  
See Next Table  
700  
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)  
Operating junction and Storage Temperature Range  
Typical thermal resistance, junction to case  
IFSM  
TJ , TSTG  
R θJC  
- 55 to + 175  
0.90  
°C /Watt  
Notes:  
1. Non-repetitive current pulse derated above TA=25°C  
UN Semiconductor Co., Ltd.  
www.unsemi.com.tw  
@ UN Semiconductor Co., Ltd. 2013  
Revision October 18, 2013  
1 / 4  
Specifications are subject to change without notice.  
Please refer to www.unsemi.com.tw for current information.  

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