Datasheet > SM8S12CA-Q1

SM8S12CA-Q1

更新时间： 2024-11-25 18:06:43

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
3页	1535K
描述
DO-218AB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SM8S12CA-Q1 数据手册

SM8S10(C)A-Q1 THRU SM8S43(C)A-Q1

Surface Mount T

ransient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Chip produced by chemical method

• Junction passivated by high temperature resistant

insulating adhesive

• T_J= 175 °C capability suitable for high reliability

and automotive requirement

• Available in Bi-directional polarity only

• Low leakage current

DO-218AB

• Low forward voltage drop

• High surge capability

• Meets ISO16750-2 surge specification (varied by test

condition)

LF maximum peak of 245 °C

• AEC-Q101 qualified

PRIMARY CHARACTERISTICS

V_BR

11.1 V to 52.8 V

10 V to 43 V

6600 W

TYPICAL APPLICATIONS

V_WM

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting,

especially for automotive load dump protection application.

P_PPM(10 x 1000 μs)

_PPM(10 x 10 000 μs)

P_D

5200 W

8 W

T_Jmax.

175 °C

MECHANICAL DATA

Polarity

Bi-directional

Unﬁ-dﬁrectﬁonal/

Case: DO-218AB

Package

DO-218AB

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“X” denotes revision code e.g. A, B, ...)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Polarity: heatsink is anode

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

Peak pulse power dissipation

SYMBOL

VALUE

UNIT

with 10/1000 μs waveform

with 10/10 000 μs waveform

6600

5200

P_PPM

Power dissipation on infinite heatsink at T_C= 25 °C (fig. 1)

Peak pulse current with 10/1000 μs waveform

P_D

8.0

(1)

I_PPM

See next table

-55 to +175

Operating junction and storage temperature range

T_J, T_STG

°C

Note

(1)

Non-repetitive current pulse derated above T_A= 25 °C

http://www.anbonsemi.com

TEL:+86-755-23776891

FAX:+86-755-81482812

Document ID

AS-1080018

Issued Date

2018/03/08

Revised Date

2023/05/12

Revision

Page.

Page 1

12 3

中文翻译

下载PDF

与SM8S12CA-Q1相关器件

型号	品牌	获取价格	描述	数据表
SM8S12HE3/2D	VISHAY	获取价格	TVS DIODE 12V 22V DO218AB
SM8S12HE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5200W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM8S12-T500	PROTEC	获取价格	Trans Voltage Suppressor Diode
SM8S13	UNSEMI	获取价格	用于汽车电子保护，可通过ISO7637-5A5B测试标准。
SM8S13	LGE	获取价格	暂无描述
SM8S13	VISHAY	获取价格	Surface Mount Automotive Transient Voltage Suppressors
SM8S13	RECTRON	获取价格	Package / Case : DO-218;Mounting Style : SMD/SMT;Power Rating : 6600 W;Polarity : Unidirec
SM8S13/2D	VISHAY	获取价格	Trans Voltage Suppressor Diode, 13V V(RWM), Unidirectional,
SM8S13/2E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 13V V(RWM), Unidirectional,
SM8S13-2D	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5200W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-