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SM8S12CA PDF预览

SM8S12CA

更新时间: 2024-11-25 18:06:55
品牌 Logo 应用领域
安邦 - ANBON /
页数 文件大小 规格书
3页 1936K
描述
DO-218AB

SM8S12CA 数据手册

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SM8S10(C)A THRU SM8S43(C)A  
Surface Mount T  
ransient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
Chip produced by chemical method  
Junction passivated by high temperature resistant  
insulating adhesive  
TJ = 175 °C capability suitable for high reliability  
and automotive requirement  
Available in Bi-directional polarity only  
Low leakage current  
DO-218AB  
Low forward voltage drop  
High surge capability  
Meets ISO16750-2 surge specification (varied by test  
condition)  
LF maximum peak of 245 °C  
PRIMARY CHARACTERISTICS  
VBR  
11.1 V to 52.8 V  
10 V to 43 V  
6600 W  
TYPICAL APPLICATIONS  
VWM  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting,  
especially for automotive load dump protection application.  
PPPM (10 x 1000 μs)  
P
PPM (10 x 10 000 μs)  
PD  
5200 W  
8 W  
TJ max.  
175 °C  
MECHANICAL DATA  
Polarity  
Bi-directional  
Unfi-dfirectfional/  
Case: DO-218AB  
Package  
DO-218AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“X” denotes revision code e.g. A, B, ...)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Polarity: heatsink is anode  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
Peak pulse power dissipation  
SYMBOL  
VALUE  
UNIT  
with 10/1000 μs waveform  
with 10/10 000 μs waveform  
6600  
5200  
PPPM  
W
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)  
Peak pulse current with 10/1000 μs waveform  
PD  
8.0  
W
A
(1)  
IPPM  
See next table  
-55 to +175  
Operating junction and storage temperature range  
TJ, TSTG  
°C  
Note  
(1)  
Non-repetitive current pulse derated above TA = 25 °C  
http://www.anbonsemi.com  
TEL:+86-755-23776891  
FAX:+86-755-81482182  
Document ID  
AS-3080018  
Issued Date  
2018/03/08  
Revised Date  
2023/05/12  
Revision  
Page.  
3
C
Page 1  

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