Datasheet > SM8S12HE3/2D

SM8S12HE3/2D

更新时间： 2024-11-24 22:58:35

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	99K
描述
TVS DIODE 12V 22V DO218AB

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中文翻译

获取价格

数据手册
替代型号

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SM8S12HE3/2D 数据手册

SM8S10A thru SM8S43A

Vishay General Semiconductor

www.vishay.com

Surface Mount PAR^®Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Junction passivation optimized design passivated

anisotropic rectifier technology

• T_J= 175 °C capability suitable for high reliability

and automotive requirement

• Available in uni-directional polarity only

• Low leakage current

• Low forward voltage drop

DO-218AB

• High surge capability

• Meets ISO7637-2 surge specification (varied by test

condition)

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_BR

11.1 V to 52.8 V

TYPICAL APPLICATIONS

V_WM

10 V to 43 V

6600 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting,

especially for automotive load dump protection application.

_PPM(10 x 1000 μs)

_PPM(10 x 10 000 μs)

5200 W

P_D

8 W

I_FSM

700 A

MECHANICAL DATA

Case: DO-218AB

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“X” denotes revision code e.g. A, B, ...)

T_Jmax.

Polarity

Package

175 °C

Uni-directional

DO-218AB

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 suffix meets JESD 201 class 2 whisker test

Polarity: heatsink is anode

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

6600

UNIT

with 10/1000 μs waveform

Peak pulse power dissipation

with 10/10 000 μs waveform

5200

Power dissipation on infinite heatsink at T_C= 25 °C (fig. 1)

Peak pulse current with 10/1000 μs waveform

P_D

8.0

(1)

I_PPM

See next table

700

Peak forward surge current 8.3 ms single half sine-wave

Operating junction and storage temperature range

I_FSM

T_J, T_STG

-55 to +175

°C

Note

(1)

Non-repetitive current pulse derated above T_A= 25 °C

Revision: 06-Dec-2018

Document Number: 88387

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

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SM8S12HE3/2D 替代型号

型号	品牌	替代类型	描述	数据表
SM8S12AHE3_A/I	VISHAY	类似代替	TVS DIODE 12V 19.9V DO218AB

与SM8S12HE3/2D相关器件

型号	品牌	获取价格	描述	数据表
SM8S12HE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5200W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM8S12-T500	PROTEC	获取价格	Trans Voltage Suppressor Diode
SM8S13	UNSEMI	获取价格	用于汽车电子保护，可通过ISO7637-5A5B测试标准。
SM8S13	LGE	获取价格	暂无描述
SM8S13	VISHAY	获取价格	Surface Mount Automotive Transient Voltage Suppressors
SM8S13	RECTRON	获取价格	Package / Case : DO-218;Mounting Style : SMD/SMT;Power Rating : 6600 W;Polarity : Unidirec
SM8S13/2D	VISHAY	获取价格	Trans Voltage Suppressor Diode, 13V V(RWM), Unidirectional,
SM8S13/2E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 13V V(RWM), Unidirectional,
SM8S13-2D	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5200W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM8S13-2E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5200W, 13V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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