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SLM80N06T PDF预览

SLM80N06T

更新时间: 2024-09-17 18:09:03
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
8页 1044K
描述
DFN5*6

SLM80N06T 数据手册

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SLM80N06T  
60V N -Channel MOSFET  
Features  
General Description  
- N-Channel:60V 80A  
This Power MOSFET is produced using Msemitek‘s  
RDS(on)Typ= 6.1mΩ@VGS = 10V  
RDS(on)Typ= 7.1mΩ@VGS = 4.5V  
advanced TRENCH technology.  
This advanced technology has been especially tailored to  
minimize conduction loss, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode.  
- Very Low On-resistance RDS(ON)  
- Low Crss  
- Fast switching  
- 100% avalanche tested  
- Improved dv/dt capability  
Application  
PWM Application  
Load Switch  
Power Management  
D
D
D
D
D
D
D
D
D
DFN5*6  
G
S
S
S
S
G
G
S
S
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
SLM80N06T  
Units  
Drain-Source Voltage  
60  
V
VDSS  
Drain Current  
- Continuous (TC = 25)  
- Continuous (TC = 100)  
- Pulsed  
80  
50  
A
A
ID  
(Note 1)  
IDM  
VGSS  
EAS  
Drain Current  
320  
A
Gate-Source Voltage  
20  
±
V
Single Pulsed Avalanche Energy  
Power Dissipation (TC = 25)  
324  
108  
mJ  
W
PD  
R θJC  
TJ, TSTG  
Thermal Resistance, Junction to Case  
Operating and Storage Temperature Range  
1.4  
/W  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
TL  
300  
* Drain current limited by maximum junction temperature.  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev2.1 Oct. 2022  

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